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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides specifications for the 2SD686 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-220C package and is a complementary transistor to the 2SB676. - It is a DARLINGTON transistor suitable for switching applications, hammer drive, pulse motor drive, and power amplifier applications. - Absolute maximum ratings and characteristics like current gain, breakdown voltage, and switching times are provided. - A package outline diagram is included showing the physical dimensions.

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46 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides specifications for the 2SD686 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-220C package and is a complementary transistor to the 2SB676. - It is a DARLINGTON transistor suitable for switching applications, hammer drive, pulse motor drive, and power amplifier applications. - Absolute maximum ratings and characteristics like current gain, breakdown voltage, and switching times are provided. - A package outline diagram is included showing the physical dimensions.

Uploaded by

beta2009
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors

2SD686

DESCRIPTION With TO-220C package Complement to type 2SB676 DARLINGTON High DC current gain APPLICATIONS Switching applications Hammer drive,pulse motor drive Power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION

Absolute maximum ratings(Ta=25 )


SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 80 5 4 30 150 -50~150 UNIT V V V A W

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=3A; IB=6mA IC=3A; IB=6mA VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V 2000 1000 MIN 80 TYP.

2SD686

SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2

MAX

UNIT V

1.5 2.0 20 2.5

V V A mA

Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC=30V;RL=10@ 0.2 1.5 0.6 s s s

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

2SD686

Fig.2 Outline dimensions (unindicated tolerance:0.10mm)

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