BF2030 Data Sheets
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tarpinoBF2030...
Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Pb-free (RoHS compliant) package 1) Qualified according AEC Q101
Drain AGC RF Input RG1 VGG G2 G1
RF Output + DC
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model
Type BF2030 BF2030R BF2030W
Package SOT143 SOT143R SOT343 1= S 1= D 1= D 2=D 2=S 2=S
Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 -
Marking NDs NDs NDs
Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS 76 C, BF2030, BF2030R TS 94 C, BF2030W Storage temperature Channel temperature
1Pb-containing
Symbol VDS ID IG1/2SM +VG1SE Ptot
Value 8 40 10 6 200 200
Unit V mA V mW
Tstg Tch
-55 ... 150 150
package may be available upon special request
2007-04-20
BF2030...
Thermal Resistance Parameter Channel - soldering point 1) BF2030/ BF2030R BF2030W Symbol
Rthchs
Value 370 280
Unit K/W
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Drain-source breakdown voltage ID = 20 A, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 k Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 A Gate2-source pinch-off voltage VDS = 5 V, I D = 20 A
1For
Symbol min. V(BR)DS +V(BR)G1SS +V(BR)G2SS +IG1SS +IG2SS IDSS IDSX VG1S(p) VG2S(p) 10 6 6 0.3 0.3
Values typ. 12 0.5 0.6 max. 15 15 50 50 50 -
Unit
nA
A mA V
calculation of R thJA please refer to Application Note Thermal Resistance
2007-04-20
BF2030...
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. AC Characteristics (verified by random sampling) gfs Cg1ss 27 31 2.4 2.8 mS pF Forward transconductance VDS = 5 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Output capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Power gain VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, V G2S = 4...0 V, f = 800 MHz G p 40 50 F 1.5 2.2 dB Gp 20 23 dB Cdss 1.3 typ. max.
Unit
2007-04-20
BF2030...
Total power dissipation Ptot = (TS) BF2030, BF2030R Total power dissipation Ptot = (TS) BF2030W
220
mW
220
mA
180 160
180 160
P tot
140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150
P tot
140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150
TS
TS
Drain current ID = (IG1) VG2S = 4V
28 mA 24 22 20
Output characteristics ID = (V DS) VG2S = 4V VG1S = Parameter
20
mA 1.4V
16 14
1.3V
ID
ID
18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 A 100
12
1.2V
10 8 6
1V
1.1V
4 2 0 0
0.8V
10
IG1
VDS
2007-04-20
BF2030...
Gate 1 current IG1 = (V G1S) VDS = 5V VG2S = Parameter
210 A 180 165 150
3.5V 4V
Gate 1 forward transconductance g fs = (ID) VDS = 5V, VG2S = Parameter
40
mS 4V
30
3V
I G1
135 120 105 90 75 60 45 30 15 0 0 0.4 0.8 1.2 1.6 2 2.4
V 2V 2.5V 3V
g fs
25
2.5V
20
2V
15
10
0 0
12
16
20
24 mA
30
VDS
ID
Drain current ID = (VG1S) VDS = 5V VG2S = Parameter
30 mA
4V
Drain current ID = (V GG) VDS = 5V, VG2S = 4V, RG1 = 100k
(connected to VGG, V GG=gate1 supply voltage)
13 mA 11
24 22
3V
10 9
20
ID
ID
2V 1.5V V
18 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 2
8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4
V
VG1S
VGG
2007-04-20
BF2030...
Drain current ID = (VGG) VG2S = 4V RG1 = Parameter in k
28 mA
70
Crossmodulation Vunw = (AGC) VDS = 5 V
120
dBV
24 22 20
100 80
110
ID
18 16 14 12 10 8
120
V unw
105
100
95
90 6 4 2 0 0 1 2 3 4 5 6
V
85
80 0
10
20
30
40
dB
55
VGG=VDS
AGC
2007-04-20
BF2030...
Cossmodulation test circuit
VAGC
VDS 4n7
R1 10k 4n7
2.2 uH
4n7
RL
50
RGEN
50
4n7 50 RG1
VGG
Semibiased
2007-04-20
Package SOT143
BF2030...
Package Outline
0.15 MIN.
2.9 0.1 1.9
4 3
1 0.1 0.1 MAX.
1.3 0.1
2.4 0.15
10 MAX.
10 MAX.
0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B
0.08...0.1
0...8 0.2 M A
Foot Print
0.8 1.2 0.8
0.9
1.2 0.8
0.8
Marking Layout (Example)
Manufacturer
RF s
Pin 1
56
Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
0.9
1.1
2005, June Date code (YM)
BFP181 Type code
0.2
Pin 1
3.15
2.6 8
1.15
2007-04-20
Package SOT143R
BF2030...
Package Outline
B
0.15 MIN.
2.9 0.1 1.9
4 3
1 0.1
0.1 MAX.
2.4 0.15
2 0.2
+0.1 0.8 -0.05
10 MAX.
0.08...0.15
0.4 +0.1 -0.05 1.7 0.25
M
0... 8
0.2
M
Foot Print
0.8 1.2 0.8
0.8
0.8
1.2
Marking Layout (Example)
Reverse bar
0.9
1.1
0.9
2005, June Date code (YM)
Pin 1
Manufacturer
BFP181R Type code
Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
4 0.2
Pin 1
3.15
2.6
1.15
10 MAX. 1.3 0.1
2007-04-20
Package SOT343
BF2030...
Package Outline
2 0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1
M +0.1 0.6 -0.05
0.9 0.1 0.1 MAX. 0.1 A
1.25 0.1 2.1 0.1
0.1 MIN.
0.15 -0.05 0.2
M
+0.1
Foot Print
0.6
0.8
1.15 0.9
Marking Layout (Example)
Manufacturer
1.6
2005, June Date code (YM)
Pin 1
BGA420 Type code
Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
4 0.2
Pin 1
2.15
2.3
1.1
10
2007-04-20
BF2030...
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Mnchen, Germany Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
11
2007-04-20
