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Bulk CMOS Process Description: - N-Well Process - Single Metal Only Depicted - Double Poly

This document summarizes the basic steps of a bulk CMOS process using a single metal layer and double poly layers. It outlines the key photolithography steps to fabricate n-channel and p-channel MOSFETs, resistors, and capacitors. These include n-well implantation, field oxide growth, poly 1 and 2 deposition, p-type diffusion, contact formation, and metal 1 deposition. Cross-section views are provided to illustrate each processing step.

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Pushparaj Karu
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0% found this document useful (0 votes)
59 views40 pages

Bulk CMOS Process Description: - N-Well Process - Single Metal Only Depicted - Double Poly

This document summarizes the basic steps of a bulk CMOS process using a single metal layer and double poly layers. It outlines the key photolithography steps to fabricate n-channel and p-channel MOSFETs, resistors, and capacitors. These include n-well implantation, field oxide growth, poly 1 and 2 deposition, p-type diffusion, contact formation, and metal 1 deposition. Cross-section views are provided to illustrate each processing step.

Uploaded by

Pushparaj Karu
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Bulk CMOS Process Description

N-well process Single Metal Only Depicted Double Poly

Prepared by Randy Geiger, September 2001

Components Shown
n-channel MOSFET p-channel MOSFET Poly Resistor Doubly Poly Capacitor

Consider Basic Components Only


Well Contacts and Guard Rings Will be Discussed Later

D
G S B S B

D
B

n-channel MOSFET

D
G S B W L B B

Capacitor

Resistor p-channel MOSFET

n-channel MOSFET

N-well Mask A A

N-well Mask A A

Detailed Description of First Photolithographic Steps Only


Top View Cross-Section View

Blank Wafer

Implant
A

n-well Photoresist Mask A p-doped Substrate ~ B B Develop Expose

Develop Exposure Photoresist N-well Mask

A-A Section

B-B Section

Implant

A-A Section

B-B Section

N-well Mask

A-A Section

B-B Section

Active Mask A

Active Mask A A

Active Mask Field Oxide

A-A Section Field Oxide Field Oxide Field Oxide

B-B Section

Poly1 Mask A A

Poly1 Mask A A

Capacitor

Resistor P-channel MOSFET

n-channel MOSFET

Poly 1 Mask

A-A Section Gate Oxide Gate Oxide

B-B Section

Poly 2 Mask A

Poly 2 Mask A A

Poly 2 Mask

A-A Section

B-B Section

P-Select

P-Select

P-Select Mask n-diffusion

A-A Section n-diffusion

B-B Section

P-Select Mask p-diffusion

A-A Section p-diffusion

B-B Section

Contact Mask A

Contact Mask A A

Contact Mask

A-A Section

B-B Section

Metal 1 Mask

Metal 1 Mask

Metal Mask

A-A Section

B-B Section

Capacitor

Resistor P-channel MOSFET

n-channel MOSFET

Thats all folks!

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