This document summarizes the specifications and characteristics of NPN silicon planar medium power Darlington transistors.
The key specifications include:
- 60V maximum collector-base voltage
- Gain of 10,000 at 0.5A collector current
- 1W maximum power dissipation at 25°C ambient temperature
The document provides electrical characteristics such as breakdown voltages, saturation voltages, and current transfer ratios. It also includes graphs of typical characteristics such as gain vs collector current and saturation voltage vs collector current. Safe operating areas and thermal impedance are specified. Equations for calculating maximum operating temperature based on power dissipation are also provided.
This document summarizes the specifications and characteristics of NPN silicon planar medium power Darlington transistors.
The key specifications include:
- 60V maximum collector-base voltage
- Gain of 10,000 at 0.5A collector current
- 1W maximum power dissipation at 25°C ambient temperature
The document provides electrical characteristics such as breakdown voltages, saturation voltages, and current transfer ratios. It also includes graphs of typical characteristics such as gain vs collector current and saturation voltage vs collector current. Safe operating areas and thermal impedance are specified. Equations for calculating maximum operating temperature based on power dissipation are also provided.
This document summarizes the specifications and characteristics of NPN silicon planar medium power Darlington transistors.
The key specifications include:
- 60V maximum collector-base voltage
- Gain of 10,000 at 0.5A collector current
- 1W maximum power dissipation at 25°C ambient temperature
The document provides electrical characteristics such as breakdown voltages, saturation voltages, and current transfer ratios. It also includes graphs of typical characteristics such as gain vs collector current and saturation voltage vs collector current. Safe operating areas and thermal impedance are specified. Equations for calculating maximum operating temperature based on power dissipation are also provided.
This document summarizes the specifications and characteristics of NPN silicon planar medium power Darlington transistors.
The key specifications include:
- 60V maximum collector-base voltage
- Gain of 10,000 at 0.5A collector current
- 1W maximum power dissipation at 25°C ambient temperature
The document provides electrical characteristics such as breakdown voltages, saturation voltages, and current transfer ratios. It also includes graphs of typical characteristics such as gain vs collector current and saturation voltage vs collector current. Safe operating areas and thermal impedance are specified. Equations for calculating maximum operating temperature based on power dissipation are also provided.
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NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt
BCX38A/B/C
C B E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 80 60 10 2
E-Line TO92 Compatible VALUE UNIT V V V A mA W C
800 1 -55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio BCX38A BCX38B BCX38C SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE 500 1000 2000 4000 5000 10000 3-20 MIN. 80 60 10 100 100 1.25 1.8 TYP. MAX. V V V nA nA V V UNIT CONDITIONS. IC=10 A, IE=0 IC=10mA, IB=0 IE=10 A, IC=0 VCB=60V, IE=0 VEB=8V, IC=0 IC=800mA, IB=8mA* IC=800mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V*
