DC-DC Part 6 Double
DC-DC Part 6 Double
DC-DC Part 6 Double
[6- 1]
[6- 2]
IL
Iav t
IR
Iav
DC
t IC Capacitor Current AC t
[6- 3]
IC
t1
IL 2
Ts
Ripple
IL
t2
VC
Vc
Q VC = ; C
Q = IL dt;
t1
t2
Q =
IL Ts 1 ; 2 2 2
Q =
IL Ts 8
VC =
IL 1 8C fs
[6- 4]
IL = Vo t off / L
IL =
Ripple
VC =
The effect of fs
I =
VoDoff Lfs
VC = IL 8fsC
L; fs can be traded for same I C;fs can be traded for same I& VC if fs is increased for given L, C
VC =
VoDoff
2 8LCfs
[6- 5]
S Vin control D
L IL
Example
IC C R IR
IL = 1A C = 47 F
Ts = 10 S ESR = 10 m
VC =
1A 10 S = 25 mV 8 47F
VESR = 10 m 1A = 10 mV
zApproximate
V = VC + VESR = 25 mV + 10 mV = 35 mV
[6- 6]
Application of Simulation
10meg R4 D1 Dbreak V1 {Vin} L1 {L1} L2 {L1*(n*n)} out_gnd C1 220u IC = 6 RL {Load} out
drain
0
V1 = 0 V2 = 15 TD = 0 TR = 0.01u TF = 0.01u PW = 10u PER = 20u
gate V2
S1
+ +
Sbreak
K K1 K_Linear COUPLING = 1 L1 = l1 L2 = l2
PARAM ET ERS:
n = 0.5 Vin = 12 L1 = 300u Load = 10
[6- 7]
zSoft
[6- 8]
Diode voltage
VD
t VO VDmax
[6- 9]
Lstray
Lstray Lstray
V DS VO t
[6- 10]
+VC
I
t VD VPK VF t
clamp
[6- 11]
RL
RG CGS Vgs LS
(real) Vgs
Vgs
V'gs
Depend on Q
Q=
LS Cgs RL + R G
[6- 12]
Clamps
limiting maximum voltage
Vin
Vo
Vin
VO
Vds
Ipk
Llkg Cdss
Llkg Cdss
V DS VO t
[6- 13]
Solutions
Vin n:1 VO Vin n:1 VO
Llkg Cdss
Llkg
[6- 14]
Simple Example
Vin
A
Vin
But ...
[6- 15]
Parasitic inductance
Vin L1
Energy of L1 L2 L3 L4 will cause high spike on C (FET). The FET is not protected!
C L2 L3 L4
Rule:
Connect clamps and snubbers directly to the elements to be protected
[6- 16]
To protect FET
Vin Line
D LD
Line
Still:
RG LS S
[6- 17]
[6- 18]
Snubber
VCc
Vav
Ts
+
' Vo
L lkg Ip CC R C VCc
VCc Cc
Rc
VCc > Vo
[6- 19]
Leakage discharge
Ipk
Ip
dI dt
Ip av Rc = VCc av Rc Cc = T > Ts
tp
tp =
[6- 20]
[6- 21]
Simulation Exercise
10meg R4 D1 Dbreak V1 {Vin} drain L1 {L1} L2 {L1*(n*n)} out_gnd C1 220u IC = 6 RL {Load} out
0
V1 = 0 V2 = 15 TD = 0 TR = 0.01u TF = 0.01u PW = 10u PER = 20u
gate V2
S1
+ +
Sbreak
K K1 K_Linear COUPLING = 1 L1 = l1 L2 = l2
PARAM ET ERS:
n = 0.5 Vin = 12 L1 = 300u Load = 10
Add 1uH leakage to Flyback converter. Design a clamp and check it by simulation.
[6- 22]
Vo
CD
Lstray
Lstray
Diode Snubber
[6- 23]
Snubber waveforms
VD
CS RS VO
no snubber
bad snubber
Vo
CD Lstray
VD
good snubber
CS is very l arg e VO
Cs > CD V 2CS 2
[6- 24]
Snubber design
Design - use simulation in circuit tuning Needed information Ipk ( Reverse ) Lstray
CS R S Lstray Ipk VO
L stray Ipk 2
moves to Cs Vo + V
R s damping
[6- 25]
Switch Snubbers
control
VGS
t
VS
VS
IS
Jd Pswitching
t
[6- 26]
Snubber types
Snubbers = control of
dV snubbers dt dI snubbers dt
dV dI or dt dt
[6- 27]
Snubber types
Passive (dissipative) snubber Energy lost to heat Non-dissipative (lossless) snubber Energy recovered Passive Snubbers by passive network Active snubbers by auxiliary active devices
[6- 28]
Switching overlap
control
VGS
t
VS dI dt dV dt
t
Jp
IS
[6- 29]
Switch Snubber
Vo
dV
dt (at turn off) can be slow down by adding external snubber capacitor C
Vo
At turn off
Cdss
C
[6- 30]
dV/dt
dV I = dt C + Cdss Cdss - output capacitance of FET I = 1 Amp C + Cdss= 1nF
dV 1 103 = 9 = 6 = 1 kV S dt 10 10
[6- 31]
Capacitor losses
C
2
Vo
Problem at turn on !
CVO EC = (J ) 2
CV Pd = O fs 2
[6- 32]
Solution
VO CS RS
VO
Snubbing
CS
[6- 33]
Reset
VO CS RS
RDSon
If Rds on < Rs most energy will be lost to Rs Heat Selection of Cs Selection of Rs to ensure reset
T=
1 << t on R sC s
t on 4R sCs
[6- 34]
CV 2 2
Losses
Cdss
[6- 35]
C1 C2
VC 2 VC 2
t
Q2
delay
t
IL
VDS1
t
VDS2
[6- 36]
t
Q2
delay
t
IL
VDS1
t
VDS2