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Two Kinds of Metal-Semiconductor Contacts

1. Metal-semiconductor contacts can form either rectifying Schottky diodes or low-resistance ohmic contacts depending on whether the semiconductor is lightly or heavily doped. 2. Schottky barriers form at the interface between a metal and a semiconductor and their height depends on the metal work function. They exhibit rectifying behavior in the forward bias direction. 3. Ohmic contacts form on heavily doped semiconductors and have a linear current-voltage relationship due to tunneling of carriers through a thin barrier. They have low contact resistance.

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192 views19 pages

Two Kinds of Metal-Semiconductor Contacts

1. Metal-semiconductor contacts can form either rectifying Schottky diodes or low-resistance ohmic contacts depending on whether the semiconductor is lightly or heavily doped. 2. Schottky barriers form at the interface between a metal and a semiconductor and their height depends on the metal work function. They exhibit rectifying behavior in the forward bias direction. 3. Ohmic contacts form on heavily doped semiconductors and have a linear current-voltage relationship due to tunneling of carriers through a thin barrier. They have low contact resistance.

Uploaded by

NK NK
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Semiconductor Devices for Integrated Circuits (C.

Hu) Slide 9-1


Chapter 9 Metal-Semiconductor Contacts
:
metal on lightly doped silicon
rectifying Schottky diodes
metal on heavily doped silicon
low-resistance ohmic contacts
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-2
9.1 Schottky Barriers
Energy Band Diagram of Schottky Contact

B
q
Bn
q
Bp
E
g
q
Bn
E
c
E
c
E
f
E
f
E
v
E
v
q
Bp
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-3
Schottky barrier heights for electrons and holes

Bn
Bn
Bp
m

Bn

Bp

Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-4

Bn
Increases with Increasing Metal Work Function
q
Bn
E
c
E
v
E
f
E
q
M

Si
q
Bn
= q
M

Si
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-5

Bn
is typically 0.4 to 0.9 V
E
f
E
c
Question

Bp
q
Bn E
c
E
v
E
f
E
q
M

Si
+
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-6
Schottky barrier heights of metal silicide on Si
metal-silicon
contact
Bn
Bp
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-7
Using CV Data to Determine
B
A
W
C
qN
V
W
N
N
kT q
E E q q
dep
s
d
bi s
dep
d
c
Bn
f c Bn bi


=
+
=
=
=
Question:
How should we plot the CV
data to extract
bi
?
E
v
E
v
E
c
E
f
E
f
E
c
q
Bn
q
bi
q
Bn
q(
bi
+ V)
qV
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-8

bi
,

A qN
V
C
s d
bi

+
=
d
c
Bn f c Bn bi
N
N
kT q E E q q = =
Using CV Data to Determine
B
V
/C

bi
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-9
9.2 Thermionic Emission Theory
kT q
o
kT qV
kT qV kT q
n
thx M S
n thx n th
kT V q
n
kT V q
c
B
B
B B
e J e J
e e T
h
k qm
qnv J
m kT v m kT v
e
h
kT m
e N n


=
= =
= =
(

= =
E
fn
q(
B
V)
q
B
qV
V
E
fm
E
v
E
c
x
v
thx
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-10
9.3 Schottky Diode
E
f
q

B
E
fn
>
q

B
q
V
E

E
f
= q

B
q

B
V = 0

= =
0
E
fn
q

B

q

B

>>
=
0
qV

<< =
0
V
I

=
0
0

=
0

=
0
e
qV/kT

=
0
=
0
E
fn
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-11
= = + =
=
=

kT qV kT qV
S M M S
n
kT q
e I I e I I I I
h
k qm
K
e AKT I
B

E
f
E
fn
q

B

q

B
qV

=
0

=
0
e
qV/kT
9.3 Schottky Diode
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-12
9.4 Applications of Schottky Diodes
I

B
I
V

I
V

B
kT q
kT qV
B
e AKT I
e I I

=
=
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-13
Switching Power Supply
Question:
Synchronous Rectifier
V I I I e
qV/kT
V
out
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-14
No excess carrier storage.
What application may benefit
from that?
9.4 Applications of Schottky Diodes
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-15
GaAs MESFET
Question:
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-16
9.5 Ohmic Contacts
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-17
SALICIDE (Self-Aligned Silicide) Source/Drain
R
s
R
d
Question:
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-18
d Bn
N V H
n d thx d M S
o n n s
e m kT qN P v qN J
m m h m H


=
= =


9.5 Ohmic Contacts
x x
V
d
Bn s
dep
qN
W

=
d Bn
N H
e P

=
E
v
E
c
, E
f
E
fm
E
v
E
c
, E
f

Bn
V

Bn
Semiconductor Devices for Integrated Circuits (C. Hu) Slide 9-19
=
|
.
|

\
|

d Bn
d Bn
N H
d thx
N H
M S
c
e
N H qv
e
dV
dJ
R

9.5 Ohmic Contacts

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