World Institute of Technology: Section A: Semiconductor Diode
World Institute of Technology: Section A: Semiconductor Diode
Faculty: Ishita Aggarwal Course Title: Analog Electronics Course code:EE-202-F semester:4th
Topics Review of P-N junction and Characteristics, P-N junction as a rectifier Switching characteristics of Diode Diode as a circuit element. The load-line concept, half-wave rectifiers. full wave rectifiers. Clipping circuits, clamping circuits, filter circuits, peak to peak detector ,voltage multiplier circuits. Section B: MOSFET Review of device structure operation and V-I characteristics. Circuits at DC MOSFET as Amplifier and switch Biasing in MOS amplifier circuits. small-signal operation and models single stage MOS amplifier MOSFET internal capacitances and high frequency model, frequency response of CS amplifier
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Lecture 2 Lecture 3
Lecture 9
Lecture 15& 16
Lecture 17
Lecture 18
Section C:BJT
V-I characteristics circuit BJT circuits at DC, BJT as amplifier and switch, biasing in BJT amplifier Circuit. Small-signal and models, operation
Lecture 24 Lecture 25
BJT
Lecture 28
Lecture 29
difference amplifier, Effect of finite open loop gain and bandwidth on circuit performance . Large signal operation of op-amp
Lecture 30(ii)Feedback
Lecture 31
the four basic feed back topologies: the seriesshunt feedback amplifier, The series-series feedback amplifier shunt series feedback amplifier. Numericals (iii)Differential Amplifier MOS differential pair, small signal operation of the MOS differential pair BJT differential pair Other non-ideal characteristic of the Differential amplifier (DA), DA with active load.
Lecture 32
Lecture 33
Lecture 34 Lecture 35
Lecture 36 Lecture 37
Lecture 38
Numericals