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Tutorial-1: Department of Electronics and Communication Engineering

This document contains tutorial questions for an electronics engineering course. It includes 5 questions related to analyzing circuits that contain silicon diodes and calculating values like voltage, current, and dynamic resistance. The first two questions ask to determine voltage and current levels for circuits shown in figures 1 and 2 using diode characteristics. The third question involves calculating current through a diode at different reverse bias voltages using a given room temperature reverse bias current. The last two questions involve calculating the output voltage and current for a given circuit, and determining the dynamic resistance of a silicon p-n junction diode at room temperature for a specified current value.

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Anurag Singhal
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48 views1 page

Tutorial-1: Department of Electronics and Communication Engineering

This document contains tutorial questions for an electronics engineering course. It includes 5 questions related to analyzing circuits that contain silicon diodes and calculating values like voltage, current, and dynamic resistance. The first two questions ask to determine voltage and current levels for circuits shown in figures 1 and 2 using diode characteristics. The third question involves calculating current through a diode at different reverse bias voltages using a given room temperature reverse bias current. The last two questions involve calculating the output voltage and current for a given circuit, and determining the dynamic resistance of a silicon p-n junction diode at room temperature for a specified current value.

Uploaded by

Anurag Singhal
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

TUTORIAL-1
SUBJECT: ELECTRONICS ENGINEERING (EC-101)
Q1. Using the approximate characteristics for the Si diodes determine the level of VD, ID & VR for the circuit given in fig.1. Q2. Determine the VO for the circuit given in fig.2.

Fig (2) Q3.

Fig (1)

The current flowing through a certain p-n junction at room temperature when reverse biased (bias voltage being very large in comparison to VT) is 0.3 A. Determine the current flowing through the diode when the applied voltages are 1. 0.30 V 2. -2.5V.

Q4.

What is the magnitude of Dynamic resistance r for Si p-n junction diode at room temperature and for D.C. current of 1.5 mA.

Q5.

Calculate Vo & Io in the given circuit

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