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    Transistor 2 SC 3858 e

    Uploaded by

    Tamir Itet
    1. This document provides specifications for the 2SC3858 silicon NPN triple diffused planar transistor, including maximum ratings, electrical characteristics, external dimensions, and typical switching and thermal characteristics. 2. Key specs include an absolute maximum collector-base voltage of 200V, DC current gain of 50-180, cutoff frequency of 300MHz, and power dissipation derating curve for different ambient temperatures. 3. The transistor is intended for audio and general purpose applications operating at temperatures from -55 to 150 degrees Celsius.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Transistor 2 SC 3858 e

    Uploaded by

    Tamir Itet
    126 views1 page
    1. This document provides specifications for the 2SC3858 silicon NPN triple diffused planar transistor, including maximum ratings, electrical characteristics, external dimensions, and typical switching and thermal characteristics. 2. Key specs include an absolute maximum collector-base voltage of 200V, DC current gain of 50-180, cutoff frequency of 300MHz, and power dissipation derating curve for different ambient temperatures. 3. The transistor is intended for audio and general purpose applications operating at temperatures from -55 to 150 degrees Celsius.

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    Transistor 2 Sc 3858 e

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    1. This document provides specifications for the 2SC3858 silicon NPN triple diffused planar transistor, including maximum ratings, electrical characteristics, external dimensions, and typical switching and thermal characteristics. 2. Key specs include an absolute maximum collector-base voltage of 200V, DC current gain of 50-180, cutoff frequency of 300MHz, and power dissipation derating curve for different ambient temperatures. 3. The transistor is intended for audio and general purpose applications operating at temperatures from -55 to 150 degrees Celsius.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    126 views1 page

    Transistor 2 SC 3858 e

    Uploaded by

    Tamir Itet
    1. This document provides specifications for the 2SC3858 silicon NPN triple diffused planar transistor, including maximum ratings, electrical characteristics, external dimensions, and typical switching and thermal characteristics. 2. Key specs include an absolute maximum collector-base voltage of 200V, DC current gain of 50-180, cutoff frequency of 300MHz, and power dissipation derating curve for different ambient temperatures. 3. The transistor is intended for audio and general purpose applications operating at temperatures from -55 to 150 degrees Celsius.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    2SC3858

    Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) sAbsolute maximum ratings (Ta=25C)
    Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 200 200 6 17 5 200(Tc=25C) 150 55 to +150 Unit V V V A A W C C

    Application : Audio and General Purpose


    (Ta=25C)

    sElectrical Characteristics
    Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=8A IC=10A, IB=1A VCE=12V, IE=1A VCB=10V, f=1MHz 100max 100max 200min

    External Dimensions MT-200


    36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2

    Ratings

    Unit

    A A
    V
    a b

    50min 2.5max 20typ 300typ V MHz pF

    20.0min

    4.0max

    2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1

    hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)

    sTypical Switching Characteristics (Common Emitter)


    VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 1 IB2 (A) 1 ton (s) 0.5typ tstg (s) 1.8typ tf (s) 0.6typ

    Weight : Approx 18.4g a. Part No. b. Lot No.

    I C V CE Characteristics (Typical)
    5A

    V CE ( sat ) I B Characteristics (Typical)


    Collector-Emitter Saturation Voltage V C E (s at) (V ) 3

    I C V BE Temperature Characteristics (Typical)


    17 15 (V C E =4V)

    17 15
    1.

    1A

    0 70

    mA

    500

    mA

    300m
    Collector Current I C (A)

    20 0m A

    Collector Current I C (A)

    10
    100mA

    10

    p)

    Tem

    125

    I B =20mA

    10A 5A 0 0 1 2 3 0 0

    30C

    25C

    I C =15A

    (Case

    (Ca

    50mA

    se

    1 Base-Emittor Voltage V B E (V)

    Temp

    Collector-Emitter Voltage V C E (V)

    Base Current I B (A)

    (V C E =4V) 300 DC C urrent G ain h FE DC C urrent G ain h FE 200 125C 100 25C 50 30C

    (V C E =4V)

    j - a ( C/W)

    h FE I C Characteristics (Typical)

    h FE I C Temperature Characteristics (Typical)

    j-a t Characteristics
    2

    Transient Thermal Resistance

    100

    Typ

    0.5

    50

    20 0.02

    0.1

    0.5

    10 17

    10 0.02

    0.1

    0.5

    10 17

    0.1

    10

    100 Time t(ms)

    1000

    2000

    Collector Current I C (A)

    Collector Current I C (A)

    f T I E Characteristics (Typical)
    (V C E =12V) 30 50

    Safe Operating Area (Single Pulse)


    200
    20 m s
    3 10 ms m s

    P c T a Derating

    Maxim um Power Dissi pation P C (W)

    Typ
    Cu t-off Fre quen cy f T ( MH Z ) 10 5

    160

    10 0m s

    W ith

    20

    Co lle ctor Cu rre nt I C ( A)

    In fin

    120

    ite he at si nk

    1 0.5 Without Heatsink Natural Cooling

    80

    10

    40 Without Heatsink 0 25 50 75 100 125 150

    0 0.02

    0.1 0.1 1 Emitter Current I E (A) 10 2 10 100 300 Collector-Emitter Voltage V C E (V)

    5 0

    Ambient Temperature Ta(C)

    81

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