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Experiment No: 8 Problem A: (I)

The document describes two PSPICE experiments involving circuit analysis and simulations. Experiment 8 involves (i) calculating characteristics of an inverting amplifier, and (ii) plotting the output waveform for a sinusoidal input. Experiment 9 involves (i) drawing the ID-VDS curve for an NMOS transistor, and (ii) plotting the voltage transfer and transient characteristics of an NMOS inverter circuit. PSPICE code and results are provided for each analysis.

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Vishal Gaur
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46 views

Experiment No: 8 Problem A: (I)

The document describes two PSPICE experiments involving circuit analysis and simulations. Experiment 8 involves (i) calculating characteristics of an inverting amplifier, and (ii) plotting the output waveform for a sinusoidal input. Experiment 9 involves (i) drawing the ID-VDS curve for an NMOS transistor, and (ii) plotting the voltage transfer and transient characteristics of an NMOS inverter circuit. PSPICE code and results are provided for each analysis.

Uploaded by

Vishal Gaur
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
You are on page 1/ 8

EXPERIMENT NO: 8

Problem A:
(i)

Using PSPICE, calculate voltage gain, input resistance and output resistance
of the inverting amplifier circuit as shown in Fig. 8.1

(ii)

Plot the output waveform when input is sinusoidal having peak value of 5v.

Figure 8.1

Problem B: An integrator circuit is shown in Fig. 8.2 for the input voltage as shown in Fig
8.3. Plot the transient response of the output voltage for the duration of 0 to 4ms insteps of
50sec.

Figure 8.2

Figure 8.3

PSPICE CODE :
(i)
e1 3 0 0 1 10000
vin 2 0 20
r1 2 1 5
rf 1 3 500
.tf v(3) vin
.probe
.op
.end

Output :
V(3)/vin = -9.900E+01
INPUT RESISTANCE AT vin = 5.050E+00
OUTPUT RESISTANCE AT V(3) = 0.000E+00

(ii)
e1 3 0 0 1 10000
vin 2 0 sin(0 5 100 0 0)
r1 2 1 5
rf 1 3 500
.tf v(3) vin
.tran 1u 15m 0
.print tran v(3)
.probe
.op
.end

Result :

Problem B:

e1 4 0 0 2 10000
vin 1 0 pulse(-1 1 1m 0 0 1m 2m)
r1 1 2 2.5k
rf1 4 0 100k
c1 2 4 0.1uf
rf2 2 4 1meg

.tran 50u 6m 0
.print tran v(4)
.probe
.op
.end

Result:

EXPERIMENT NO: 9

Problem A: Using PSPICE, draw the ID- VDS characteristic of n channel Mosfet.(Fig. 9.1
shown below).

Figure 9.1
Problem B: Using PSPICE, Plot the voltage transfer characteristic and transient
characteristic of NMOS inverter with enhancement load in the circuit shown in Fig.9.2

Figure 9.2

Problem A :

m1 1 2 0 0 n-mos l=10um w=100um


.model n-mos nmos((LEVEL=3 TOX=7.9E-9 NSUB=1E17
+ GAMMA=0.5827871 PHI=0.7 VTO=0.5445549 DELTA=0
+ UO=436.256147 ETA=0 THETA=0.1749684 KP=2.055786E-4
+ VMAX=8.309444E4 KAPPA=0.2574081 RSH=0.0559398
+ NFS=1E12 TPG=1 XJ=3E-7 LD=3.162278E-11 WD=7.04672E-8
+ CGDO=2.82E-10 CGSO=2.82E-10 CGBO=1E-10 CJ=1E-3
+ PB=0.9758533 MJ=0.3448504 CJSW=3.777852E-10
+ MJSW=0.3508721)
vgs 2 0 0v
vd 1 0 0v
.dc vd 0 10 1 vgs 0 10 1
.probe
.end

Result :

Problem B :

Transient

vin 3 0 pulse[5 0 10u 0 0 10u 20u]


m1 1 1 2 0 n-mos l=10um w=100um
.model n-mos nmos((LEVEL=3 TOX=7.9E-9 NSUB=1E17
+ GAMMA=0.5827871 PHI=0.7 VTO=0.5445549 DELTA=0
+ UO=436.256147 ETA=0 THETA=0.1749684 KP=2.055786E-4
+ VMAX=8.309444E4 KAPPA=0.2574081 RSH=0.0559398
+ NFS=1E12 TPG=1 XJ=3E-7 LD=3.162278E-11 WD=7.04672E-8
+ CGDO=2.82E-10 CGSO=2.82E-10 CGBO=1E-10 CJ=1E-3
+ PB=0.9758533 MJ=0.3448504 CJSW=3.777852E-10
+ MJSW=0.3508721)
m2 2 3 0 0 n-mos1 l=10um w=100um
.model n-mos1 nmos((LEVEL=3 TOX=7.9E-9 NSUB=1E17
+ GAMMA=0.5827871 PHI=0.7 VTO=0.5445549 DELTA=0
+ UO=436.256147 ETA=0 THETA=0.1749684 KP=2.055786E-4
+ VMAX=8.309444E4 KAPPA=0.2574081 RSH=0.0559398
+ NFS=1E12 TPG=1 XJ=3E-7 LD=3.162278E-11 WD=7.04672E-8
+ CGDO=2.82E-10 CGSO=2.82E-10 CGBO=1E-10 CJ=1E-3
+ PB=0.9758533 MJ=0.3448504 CJSW=3.777852E-10
+ MJSW=0.3508721)
vdd 1 0 5v
.tran 1u .1m 0m
.print tran v(2)
.probe
.end

Result :

Transfer
vin 3 0 0v
m1 1 1 2 0 n-mos l=10um w=100um
.model n-mos nmos((LEVEL=3 TOX=7.9E-9 NSUB=1E17
+ GAMMA=0.5827871 PHI=0.7 VTO=0.5445549 DELTA=0
+ UO=436.256147 ETA=0 THETA=0.1749684 KP=2.055786E-4
+ VMAX=8.309444E4 KAPPA=0.2574081 RSH=0.0559398
+ NFS=1E12 TPG=1 XJ=3E-7 LD=3.162278E-11 WD=7.04672E-8
+ CGDO=2.82E-10 CGSO=2.82E-10 CGBO=1E-10 CJ=1E-3
+ PB=0.9758533 MJ=0.3448504 CJSW=3.777852E-10
+ MJSW=0.3508721)
m2 2 3 0 0 n-mos1 l=10um w=100um
.model n-mos1 nmos((LEVEL=3 TOX=7.9E-9 NSUB=1E17
+ GAMMA=0.5827871 PHI=0.7 VTO=0.5445549 DELTA=0
+ UO=436.256147 ETA=0 THETA=0.1749684 KP=2.055786E-4
+ VMAX=8.309444E4 KAPPA=0.2574081 RSH=0.0559398
+ NFS=1E12 TPG=1 XJ=3E-7 LD=3.162278E-11 WD=7.04672E-8
+ CGDO=2.82E-10 CGSO=2.82E-10 CGBO=1E-10 CJ=1E-3
+ PB=0.9758533 MJ=0.3448504 CJSW=3.777852E-10

+ MJSW=0.3508721)
vdd 1 0 5v
.dc vin 0 10 1m
.probe
.end

Result :

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