About
My work involved new technology introduction, molecular beam epitaxy (MBE), R&D process…
Activity
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Please register for the inaugural Holonyak Workshop, to be held in person on September 12, 2024! Our keynote speakers will be Professor Amano Hiroshi…
Please register for the inaugural Holonyak Workshop, to be held in person on September 12, 2024! Our keynote speakers will be Professor Amano Hiroshi…
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Recap of Seminar on GaN-on-Si Technology! On 2nd August 2024, we had the privilege of hosting Dr. Han Wui Then, Senior Principal Engineer at Intel…
Recap of Seminar on GaN-on-Si Technology! On 2nd August 2024, we had the privilege of hosting Dr. Han Wui Then, Senior Principal Engineer at Intel…
Liked by Barry Wu
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First Call for Papers for CS-MANTECH 2025 in NOLA! Submit early and win a prize!
First Call for Papers for CS-MANTECH 2025 in NOLA! Submit early and win a prize!
Shared by Barry Wu
Experience
Education
Licenses & Certifications
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Honored Listee
Marquis Who's Who
Issued ExpiresCredential ID 4aaf693862e0458e8c449705754cc773cea40f0c06c64abd84c769bb7cd3ef78
Publications
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InP HBT Technology: Advantages, Applications and Future Challenges
Microwave Journal
In the semiconductor RF world, indium phosphide (InP) heterojunction bipolar transistors (HBTs) have historically been a niche technology. High substrate costs and a lack of manufacturing expertise have contributed to limited adoption throughout the electronics industry. InP is, however, an ideal technology for many high speed electronic applications. With superior peak electron velocity compared to Si and GaAs and a higher breakdown voltage than SiGe, InP has the potential to benefit many…
In the semiconductor RF world, indium phosphide (InP) heterojunction bipolar transistors (HBTs) have historically been a niche technology. High substrate costs and a lack of manufacturing expertise have contributed to limited adoption throughout the electronics industry. InP is, however, an ideal technology for many high speed electronic applications. With superior peak electron velocity compared to Si and GaAs and a higher breakdown voltage than SiGe, InP has the potential to benefit many microwave, mmWave and even terahertz (THz) applications. It has been used successfully in the electronic design, emulation and test industry for nearly two decades, enabling some of the highest performing instruments, including a 110 GHz real-time oscilloscope. Increasingly, InP HBTs are used or being considered for next-generation aerospace and defense, automotive and 5G/6G platforms. Capitalizing on the benefits of InP HBTs will require advanced packaging techniques to maintain high frequency performance and an industry-wide effort to reduce substrate prices.
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GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam Epitaxy
CS-MANTECH conference
A low-temperature GaAsSb extrinsic base regrowth process using in-situ hydrogen plasma treatment and MBE regrowth of a highly doped p+ GaAs1-ySby:C layer is developed on Keysight’s commercial GaAsSb/InP NpN DHBT technology platform. The SIMS data shows that the regrowth interface oxygen sheet concentration is effectively reduced by in-situ hydrogen plasma, and a 30% reduction of base resistance (Rb) of a standard emitter width GaAsSb/InP DHBT is demonstrated.
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High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls
IEEE TRANSACTIONS ON ELECTRON DEVICES
InAs/GaSb heterojunction Esaki diodes with a high peak current density of 9 MA/cm 2 are demonstrated. Negative differential resistance (NDR) is achieved from 300 to 4 K, showing that band-to-band tunneling (BTBT) is the dominant transport mechanism. By increasing the doping concentrations, the peak current increases because of more carriers available for tunneling. NDR is also clearly observed for the devices with nondegenerate doping concentrations, which could be attributed to the induced…
InAs/GaSb heterojunction Esaki diodes with a high peak current density of 9 MA/cm 2 are demonstrated. Negative differential resistance (NDR) is achieved from 300 to 4 K, showing that band-to-band tunneling (BTBT) is the dominant transport mechanism. By increasing the doping concentrations, the peak current increases because of more carriers available for tunneling. NDR is also clearly observed for the devices with nondegenerate doping concentrations, which could be attributed to the induced quantum wells at the InAs/GaSb heterojunction. To calibrate the BTBT current, devices of different mesa areas were characterized. The peak current density increases as the device is scaled down. A model of tunneling enhancement close to the mesa sidewalls by the surface defects is proposed. TCAD simulations show that the electric fields close to the sidewalls are enhanced because of the induced surface defects by dry etching in InAs and GaSb. Careful processing steps to reduce those surface defects during etching steps are required to avoid an overestimation of the BTBT current.
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High Output Power Millimeter Wave GaAsSb-InP UTC Photoreceiver MMICs
2018 IEEE Photonics Conference (IPC)
We demonstrate a type-II GaAsSb/InP source-terminated MMIC UTC photoreceiver delivering 0.15 A/W responsivity with 5.1 dBm RF power measured at 170 GHz. The photodiode-based MMIC demonstrated a small-signal 3-dB bandwidth of 220 GHz. The photodiode MMICs were subsequently mounted on sapphire and packaged.
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Measurement of Base Transit Time and Minority Electron Mobility in GaAsSb-Base InP DHBTs
CS-MANTECH conference
Measurements are presented showing an extraction of base transit time and minority carrier electron mobility in GaAsSb-Base Indium-Phosphide Double Heterojunction Bipolar Transistors. For p-doped GaAsSb with doping value 6E19 cm-3, the electron diffusion constant was found to be 61 cm2/sec. The junction temperature Tj was also characterized at the bias point IC = 6 mA, VCB = 0.55V and determined to be 85o C, which corresponds to an electron mobility of 1970 cm2/(V-s).
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0.5 THz Performance of a Type-II DHBT with a Doping-Graded and Constant-Composition GaAsSb Base
Electron Device Letters
A Type-II GaAsSb DHBT with an AlInP Emitter, doping-graded GaAsSb base and InP collector has been grown by molecular beam epitaxy. 0.38 m emitter devices have been fabricated by a triple-mesa wet etch process and demonstrated fT/fMAX = 470/540 GHz at JC = 5.1 mA/μm2 and VCB = 0.65 V. This performance is comparable to composition-graded base devices with similar emitter width.
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Performance Improvement of Composition-Graded AlGaAsSb/InP DHBTs
21st IEEE International Conference on Indium Phosphide and Related Materials (IPRM 2009)
Compositional graded base Al x Ga 1-x AsSb/InP DHBT is demonstrated to show DC current gain of ~100 with 300 Aring base and base sheet resistance of 1000 Omega/square. The improvement is more than 50% compared to uniform base GaAsSb/InP DHBT with the same base thickness and sheet resistance.
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Type-It GaAsSb/InP DHBTs with Record fT = 670 GHz and Simultaneous fT, fMAx > 400 GHz
IEEE IEDM 2007 Conference
Type-II GaAsSb/InP double-HBTs (DHBTs) with a 20 nm base and 60 nm collector exhibit record transistor performance with f T = 670 GHz and off-state collector-emitter breakdown voltage of 3.2 V. Similar devices with a 30 nm base and 100 nm collector achieve simultaneous fi = 480 GHz and f MAX = 420 GHZ with 4.3 V breakdown voltage.
More activity by Barry
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🎖New Milestone!🎖 VIS and NXP to Establish a Joint Venture to Build and Operate a 300mm Fab. The joint venture will begin construction of the…
🎖New Milestone!🎖 VIS and NXP to Establish a Joint Venture to Build and Operate a 300mm Fab. The joint venture will begin construction of the…
Liked by Barry Wu
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AMC2024 Advanced Materials Characterization Workshop starts on Tuesday! June 4 and 5, MRL, UIUC* We have now 200 registered participants, with two…
AMC2024 Advanced Materials Characterization Workshop starts on Tuesday! June 4 and 5, MRL, UIUC* We have now 200 registered participants, with two…
Liked by Barry Wu
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CS-MANTECH 2025 is in New Orleans! And let's push the CS-MANTECH follower count over 1,000!!
CS-MANTECH 2025 is in New Orleans! And let's push the CS-MANTECH follower count over 1,000!!
Shared by Barry Wu
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Looking for a way to get to test difficult frequencies? W-Band? G-Band? Terahertz? Virginia Diodes, Inc. manufactures state-of-the-art test and…
Looking for a way to get to test difficult frequencies? W-Band? G-Band? Terahertz? Virginia Diodes, Inc. manufactures state-of-the-art test and…
Liked by Barry Wu
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Anjali Anjali a graduate student from Univ of Bristol presents “Mapping of Local Threshold Voltage in AlGaN/GaN HEMTS” in the afternoon…
Anjali Anjali a graduate student from Univ of Bristol presents “Mapping of Local Threshold Voltage in AlGaN/GaN HEMTS” in the afternoon…
Liked by Barry Wu
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Have we mentioned how awesome Plasma-Therm is? Not only are they a key exhibitor and CS MANTECH platinum sponsor, but they are buying breakfast on…
Have we mentioned how awesome Plasma-Therm is? Not only are they a key exhibitor and CS MANTECH platinum sponsor, but they are buying breakfast on…
Liked by Barry Wu
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Is it too early to mention that the countdown to CS MANTECH 2025 Bourbon Street…I mean New Orleans…begins tonight?
Is it too early to mention that the countdown to CS MANTECH 2025 Bourbon Street…I mean New Orleans…begins tonight?
Liked by Barry Wu
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For those interested Qorvo, Inc. has posted quite a few job openings on the MANTECH message board! Choose your area of the country: FL, MA, NC, OR…
For those interested Qorvo, Inc. has posted quite a few job openings on the MANTECH message board! Choose your area of the country: FL, MA, NC, OR…
Liked by Barry Wu
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It is my great honor to represent Skyworks Solutions, Inc. to present at CS MANTECH in Tucson, Arizona, on our paper: "Optimization of…
It is my great honor to represent Skyworks Solutions, Inc. to present at CS MANTECH in Tucson, Arizona, on our paper: "Optimization of…
Liked by Barry Wu
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Beautiful evening on the patio celebrating a great time at the conference CS MANTECH
Beautiful evening on the patio celebrating a great time at the conference CS MANTECH
Liked by Barry Wu
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imec’s invited talk “Silicon Meets Compound Semiconductors: Pioneering Wireless Communications” kicks off Session 4.2: CS and Si Integration. This…
imec’s invited talk “Silicon Meets Compound Semiconductors: Pioneering Wireless Communications” kicks off Session 4.2: CS and Si Integration. This…
Liked by Barry Wu
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His experience in the field has led him to be appointed as the editor-in-chief of the Institute of Electrical and Electronic Engineers (IEEE) Journal…
His experience in the field has led him to be appointed as the editor-in-chief of the Institute of Electrical and Electronic Engineers (IEEE) Journal…
Liked by Barry Wu
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