Latest News for: nexperia

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30mΩ 1.2kV SiC mosfet in top-side cooled package

Eweekly 19 Mar 2025
“This package, with its compact form factor, combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation.,” claimed Nexperia.
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40V bi-directional GaN transistors

Eweekly 18 Mar 2025
With 5V gate drive, maximum on-resistance values of 1.2, 4.8, 8 or 12mΩ are available – see table below – and operation is up to 125°C. Packaging is VQFN16, WLCSP22, WLCSP16 or WLCSP12 ... Total gate charge is 60nC at 10A 20V 25°C ... max Rds(on).
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Union win at Nexperia Philippines Inc after three day strike (IndustriALL Global Union)

Public Technologies 10 Mar 2025
English 10 March, 2025After a 74-hour strike by 1,000 workers, the Nexperia Philippines Workers' Union secured the reinstatement of union ...
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