III (Family Force 5 album)

III is the third album by Christian alternative group, Family Force 5, released on October 18, 2011 and the last album to feature Solomon Olds before his departure from the band in 2013. The song "Not Alone" charted at No. 47 on the Hot Christian Songs. The next single, "Get On Outta Here", was free for several days before paid release, where it charted at No. 27 on iTunes Rock chart. Wobble charted at No. 20 on the Alternative charts for a week. "Paycheck" was the final single from the album, but did not chart. However, a music video was made for the song.

Track listing

III.V

On October 21, the band announced on Facebook that they would release III.V (translated 3.5), which would include brand new recordings such as "Zombie" and "Cray Button". On March 31, Family Force 5 announced via Twitter and Facebook that III.V was set to be released May 8, 2012.

List of semiconductor materials

Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be doped with impurities that alter its electronic properties in a controllable way.

Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science.

Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms.

Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows operation of power devices at higher temperatures, and gives lower thermal noise to low power devices at room temperature; its direct band gap gives it more favorable optoelectronic properties than the indirect band gap of silicon; it can be alloyed to ternary and quaternary compositions, with adjustable band gap width, allowing light emission at chosen wavelengths, and allowing e.g. matching to wavelengths with lowest losses in optical fibers. GaAs can be also grown in a semi-insulating form, which is suitable as a lattice-matching insulating substrate for GaAs devices. Conversely, silicon is robust, cheap, and easy to process, whereas GaAs is brittle and expensive, and insulation layers can not be created by just growing an oxide layer; GaAs is therefore used only where silicon is not sufficient.