Gaf

Gaf, or gāf, may be the name of four different Perso-Arabic letters, all representing /ɡ/. They are all forms of the letter kāf, with additional diacritics, such as dots and lines. There are three forms, each used in different places:

  • گ in Perso-Arabic alphabet and sometimes in Moroccan, occidental Algerian and many Berber languages
  • ݢ in Malay
  • ݣ in Moroccan, occidental Algerian and many Berber languages
  • ګ in Pashto
  • ڳ in Saraiki
  • G in Somali
  • Gaf with line

    گ is based on kāf with an additional line. It is rarely used in Arabic itself, but may be used to represent the sound /ɡ/ when writing other languages. It is frequently used in Persian, Urdu and Kurdish and it is one of four letters which are not found in Arabic.

    If not ݣ, this letter can be used to represent /ɡ/ in Morocco, occidental Algeria and many Berber languages.

    Gaf with single dot

    ݢ is derived from a variant form (ک) of kāf with the addition of a dot. It is not used in the Arabic language itself, but is used in the Jawi script of Malay to represent a voiced velar stop /ɡ/. Unicode includes two forms on this letter: one based on the standard Arabic kāf, ك, and one based on the variant form ک. The latter is the preferred form.

    Gallium(III) fluoride

    Gallium(III) fluoride (GaF3) is a chemical compound. It is a white solid that melts under pressure above 1000 °C but sublimes around 950 °C. It has the FeF3 structure where the gallium atoms are 6-coordinate. GaF3 can be prepared by reacting F2 or HF with Ga2O3 or by thermal decomposition of (NH4)3GaF6. GaF3 is virtually insoluble in water. Solutions of GaF3 in HF can be evaporated to form the trihydrate, GaF3·3H2O, which on heating gives a hydrated form of GaF2(OH). Gallium(III) fluoride reacts with mineral acids to form hydrofluoric acid.

    References

    Further reading

  • Barrière, A.S.; Couturier, G.; Gevers, G.; Guégan, H.; Seguelond, T.; Thabti, A.; Bertault, D. (1989). "Preparation and characterization of gallium(III) fluoride thin films". Thin Solid Films 173 (2): 243. doi:10.1016/0040-6090(89)90140-5. 

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