Radiation tolerance of SiGe BiCMOS monolithic silicon pixel detectors without internal gain layer
Abstract
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 × 1016 1 MeV n eq/cm2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 × 1014 n eq/cm2. The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35°C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm2, the time jitter of the most-probable signal amplitude was estimated to be σ t 90Sr = 21 ps for proton fluence up to 6 × 1014 n eq/cm2 and 57 ps at 1 × 1016 n eq/cm2. Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 × 1016 n eq/cm2.
- Publication:
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Journal of Instrumentation
- Pub Date:
- January 2024
- DOI:
- 10.1088/1748-0221/19/01/P01014
- arXiv:
- arXiv:2310.19398
- Bibcode:
- 2024JInst..19P1014M
- Keywords:
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- Particle tracking detectors (Solid-state detectors);
- Pixelated detectors and associated VLSI electronics;
- Timing detectors;
- Instrumentation and methods for time-of-flight (TOF) spectroscopy;
- Physics - Instrumentation and Detectors
- E-Print:
- Submitted to JINST