User profiles for author:"Lee Jack C" OR author:" Jack C Lee"

Jack C. Lee

The University of Texas at Austin, IEEE Fellow
Verified email at austin.utexas.edu
Cited by 16657

Prediction and estimation of growth curves with special covariance structures

JC Lee - Journal of the American Statistical Association, 1988 - Taylor & Francis
The model considered here is a generalized multivariate analysis-of-variance model useful
especially for many types of growth-curve problems, including biological growth and …

An oral SARS-CoV-2 Mpro inhibitor clinical candidate for the treatment of COVID-19

DR Owen, CMN Allerton, AS Anderson… - Science, 2021 - science.org
The worldwide outbreak of COVID-19 caused by severe acute respiratory syndrome
coronavirus 2 (SARS-CoV-2) has become a global pandemic. Alongside vaccines, antiviral …

Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

BH Lee, L Kang, R Nieh, WJ Qi, JC Lee - Applied Physics Letters, 2000 - pubs.aip.org
Dielectric properties of ultrathin hafnium oxide reoxidized with rapid thermal annealing
(RTA) have been investigated. Capacitance equivalent oxide thickness (CET) of 45 Å …

Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides

R Ge, X Wu, M Kim, J Shi, S Sonde, L Tao, Y Zhang… - Nano …, 2018 - ACS Publications
Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience
including topologically protected charge transport, 1, 2 spatially separated excitons, 3 and …

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst

L Ji, MD McDaniel, S Wang, AB Posadas, X Li… - Nature …, 2015 - nature.com
The rapidly increasing global demand for energy combined with the environmental impact of
fossil fuels has spurred the search for alternative sources of clean energy. One promising …

Modeling and characterization of gate oxide reliability

JC Lee, C Ih-Chin, H Chenming - IEEE Transactions on …, 1988 - ieeexplore.ieee.org
A technique of predicting the lifetime of an oxide to different voltages, different oxide areas,
and different temperatures is presented. Using the defect density model in which defects are …

Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application

BH Lee, L Kang, WJ Qi, R Nieh, Y Jeon… - … Digest (Cat. No …, 1999 - ieeexplore.ieee.org
Physical, electrical and reliability characteristics of ultra thin HfO/sub 2/as an alternative gate
dielectric were studied for the first time. Crucial process parameters of oxygen modulated dc …

Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

L Kang, BH Lee, WJ Qi, Y Jeon, R Nieh… - IEEE Electron …, 2000 - ieeexplore.ieee.org
Electrical and reliability properties of ultrathin HfO/sub 2/have been investigated. Pt
electroded MOS capacitors with HfO/sub 2/gate dielectric (physical thickness/spl sim/45 …

Finite mixture modelling using the skew normal distribution

TI Lin, JC Lee, SY Yen - Statistica Sinica, 2007 - JSTOR
Normal mixture models provide the most popular framework for modelling heterogeneity in a
population with continuous outcomes arising in a variety of subclasses. In the last two …

Thinnest nonvolatile memory based on monolayer h‐BN

X Wu, R Ge, PA Chen, H Chou, Z Zhang… - Advanced …, 2019 - Wiley Online Library
Abstract 2D materials have attracted much interest over the past decade in nanoelectronics.
However, it was believed that the atomically thin layered materials are not able to show …