Artifact metrics is an information security technology that uses the intrinsic characteristics of
a physical object for authentication and clone resistance. Here, we demonstrate nano-
artifact metrics based on silicon nanostructures formed via an array of resist pillars that
randomly collapse when exposed to electron-beam lithography. The proposed technique
uses conventional and scalable lithography processes and because of the random collapse
of resist, the resultant structure has extremely fine-scale morphology with a minimum …