The integration density of state-of-the-art electronic systems is limited by the reliability of the
manufactured integrated circuits at a desired circuit density. Design rules, operating voltages…

The intrinsic failure mechanisms and reliability models of state-of-the-art MOSFETs are
reviewed. The simulation tools and failure equivalent circuits are described. The review includes …

Threshold voltage and drain current instabilities in state-of-the-art 4H-SiC MOSFETs with
thermal as-grown SiO 2 and NO-annealed gate oxides have been studied using fast IV …

Time-dependent dielectric breakdown (TDDB) is one of the major issues concerning long-range
reliability of dielectric layers in SiC-based high-power devices. Despite the extensive …

In this review, recent trends in microelectronics packaging reliability are summarized. We
review the technology from early packaging concepts, including wire bond and BGA, to …

A methodology to analyze charge pumping (CP) data, which allows positions of probing traps
in the dielectric to be identified, was applied to extract the spatial profile of traps in SiO 2∕ …

In this paper, an effective and efficient methodology for reliability simulation is developed to
bridge the gap between device-level reliability and that at product level. For the first time, …

The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped
inductive switching (UIS) conditions are studied using simulations and measurements. The …

… It is in this simple epitaph that RB Bernstein finds the key to this … , Bernstein offers the
definitive short biography of this revered American--the first concise life in six decades. Bernstein …

CMOS very large scale integration (VLSI) circuit reliability modeling and simulation have
attracted an intense research interest in the last two decades, and as a result, almost all IC …