While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability
and cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits …

Limited endurance of resistive RAM (RRAM) is a major challenge for future computing
systems. Using thorough endurance tests that incorporate fine-grained read operations at the …

Resistive random access memories (RRAMs) feature high-speed operations, low-power
consumption, and nonvolatile retention, thus serving as a promising candidate for future …

We demonstrate, for the first time, resistive RAM (RRAM) arrays where each cell can store 3
bits. Such full array-level demonstration is possible through special techniques (eg, that …

In this letter, we propose an effective route to reduce the cell-to-cell variability in 1T-1R-based
random access memories (RRAM) arrays by combining the excellent switching …

The intercell variability of the initial state and the impact of dc and pulse forming on intercell
variability as well as on intracell variability in TiN/HfO 2 /Ti/TiN 1 transistor - 1 resistor (1T-1R) …

The forming process, which corresponds to the activation of the switching filament in Resistive
Random Access Memory (RRAM) arrays, has a strong impact on the cells’ performances. …

The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its
integration into CMOS compatible memory arrays. This CMOS integration requires a perfect …

We present features adding extra reliability margin for emerging Non-Volatile Memories
adoption in automotive microcontrollers, and discuss experimental data of embedded 28nm …

In this paper, the set operation of HfO 2 based 1T-1R arrays is studied by applying incremental
step pulse with verify algorithm. To evaluate the impact of the voltage step increment on …