A monolithically-integrated optical transmitter and receiver in a zero-change 45nm SOI process
M Georgas, BR Moss, C Sun… - 2014 Symposium on …, 2014 - ieeexplore.ieee.org
2014 Symposium on VLSI Circuits Digest of Technical Papers, 2014•ieeexplore.ieee.org
An optical transmitter and receiver with monolithically-integrated photonic devices and
circuits are demonstrated together for the first time in a commercial 45nm SOI process,
without any process changes. The transmitter features an interleaved-junction carrier-
depletion ring modulator and operates at 3.5 Gb/s with an 8dB extinction ratio and combined
circuit and device energy cost of 70fJ/bit. The optical receiver connects to an integrated SiGe
detector designed for 1180nm wavelength and performs at 2.5 Gb/s with 15μA sensitivity …
circuits are demonstrated together for the first time in a commercial 45nm SOI process,
without any process changes. The transmitter features an interleaved-junction carrier-
depletion ring modulator and operates at 3.5 Gb/s with an 8dB extinction ratio and combined
circuit and device energy cost of 70fJ/bit. The optical receiver connects to an integrated SiGe
detector designed for 1180nm wavelength and performs at 2.5 Gb/s with 15μA sensitivity …
An optical transmitter and receiver with monolithically-integrated photonic devices and circuits are demonstrated together for the first time in a commercial 45nm SOI process, without any process changes. The transmitter features an interleaved-junction carrier-depletion ring modulator and operates at 3.5Gb/s with an 8dB extinction ratio and combined circuit and device energy cost of 70fJ/bit. The optical receiver connects to an integrated SiGe detector designed for 1180nm wavelength and performs at 2.5Gb/s with 15μA sensitivity and energy cost of 220fJ/bit.
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