Enrico Santoni

Diamond has long been considered as a suitable material for the fabrication of radiation detectors due to its outstanding physical properties. Even more so in the specific case of radiation therapy dosimetry applications, where the near-tissue equivalence radiation absorption, good spatial resolution and radiation hardness are required. Recently, a synthetic single crystal diamond dosimeter was developed at “Tor Vergata” University in cooperation with PTW-Freiburg, showing excellent dosimetric… Visualizza altro

Diamond has long been considered as a suitable material for the fabrication of radiation detectors due to its outstanding physical properties. Even more so in the specific case of radiation therapy dosimetry applications, where the near-tissue equivalence radiation absorption, good spatial resolution and radiation hardness are required. Recently, a synthetic single crystal diamond dosimeter was developed at “Tor Vergata” University in cooperation with PTW-Freiburg, showing excellent dosimetric properties. Such a device was thus commercialized (microDiamondTM, PTW-type 60019) and widely accepted by the medical physics community, due to its reproducibility, reliability, accuracy and versatility. In this work, a novel diamond based dosimeter for in vivo application developed in our laboratories is presented. A basic dosimetric characterization of detector performances was performed under irradiation with 60Co and 6 MV photon beams. Response stability, short and long term reproducibility, fading effect, linearity with dose, dose rate dependence, and temperature dependence were investigated. The detector response was found to be reproducible and dose rate independent in the range between 0.5 and 5 Gy/min. Its temperature dependence was within 0.5% between 25 and 38 ◦C, and negligible fading effect was observed. The obtained results indicate the proposed novel diamond device as a promising candidate for in vivo dosimetry in radiation therapy application.
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Field effect transistors (FETs) fabricated on hydrogen-terminated diamond surface have been heavily irradiated with 14.8 MeV neutrons in order to evaluate their possible application in very high neutron fluence environments. The DC performance of the diamond-based FETs, such as drain saturation current and maximum transconductance, has been studied as a function of a 14.8 MeV neutron fluence up to 1014 n/cm2, delivered in five steps. The effects on electrical properties of H-terminated diamond… Visualizza altro

Field effect transistors (FETs) fabricated on hydrogen-terminated diamond surface have been heavily irradiated with 14.8 MeV neutrons in order to evaluate their possible application in very high neutron fluence environments. The DC performance of the diamond-based FETs, such as drain saturation current and maximum transconductance, has been studied as a function of a 14.8 MeV neutron fluence up to 1014 n/cm2, delivered in five steps. The effects on electrical properties of H-terminated diamond surface have been also investigated during the neutron irradiation experiments. The Hall parameters, i.e. sheet hole concentration, hole mobility and sheet resistance, were monitored before and after each irradiation. The performance remains stable during all the neutron fluence steps, thus assessing a remarkable radiation hardness of diamond-based devices. To the authors’ knowledge, this is the first published data on 14 MeV neutron tolerance of diamond FET devices. Meno dettagli