Apr 21, 2022 · Tunnel FETs (TFETs) and negative capacitance FETs (NCFETs) can break the subthreshold swing limitation (60 mV/dec at room temperature) of ...

Apr 21, 2022 · In this work, by experimentally investigating the whole negative differential capacitance process and its gate voltage amplification coefficient ...

Tunnel FETs (TFETs) and negative capacitance FETs (NCFETs) can break the subthreshold swing limitation (60 mV/dec at room temperature) of conventional metal-

Apr 21, 2022 · In this work, by experimentally investigating the whole negative differential capacitance process and its gate voltage amplification coefficient ...

In the present work, a detailed study is presented to investigate the impact of variations in material parameters such as remnant polarization (PR), ...

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Oct 22, 2024 · In this work, we investigate the reliability of the oxide layer in the negative capacitance field effect transistor (NCFET) by analyzing the ...

Physical investigation of subthreshold swing degradation behavior in negative capacitance FET ... capacitance FETs (NCFETs) can break the subthreshold swing ...

2D. NC-FETs exhibit robust scaling behavior compared to the 2D FETs. (c) Impact of scaling on subthreshold swing; DSS/SSLC indicates the difference of the SS at ...

Recently, it has been experimentally proven that NCFET is capable to exhibit lower subthreshold swing as low as 10mV/dec [4]. Also, a negative capacitance ...