Feb 7, 2013 · In this paper, a new tunneling field effect transistor with comb-shaped gate (CG-TFET) is proposed and experimentally demonstrated.
In this paper, a comb-gate tunneling field effect transistor (CG-TFET) is proposed to improve the tunneling current by increasing total tunneling junction width ...
A new tunneling field effect transistor with comb-shaped gate (CG-TFET) is proposed and experimentally demonstrated, which can effectively suppress the ...
In this paper, a comb-gate tunneling field effect transistor (CG-TFET) is proposed to improve the tunneling current by increasing total tunneling junction width ...
People also ask
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Zhan Z, Huang Q Q, Huang R, et al. A comb-gate silicon tunneling field effect transistor with improved on-state current. Sci China Inf Sci, 2013, 56: 072401 .
Sep 30, 2013 · Quantum tunneling is a limitation in today's transistors, but it could be the key to future devices.
In this article, a novel comb-gate-overlap-source TFET (CGOS-TFET) is designed and fabricated. The device combines surface tunneling with the electric field ...
A comb-gate silicon tunneling field effect transistor with improved on-state current ... A new tunneling field effect transistor with comb-shaped gate (CG-TFET) ...
Feb 1, 2019 · The proposed device shows improved tunnel on-state current and subthreshold swing. In addition, analytical potential model for the proposed ...
Jul 28, 2023 · This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line ...