Nov 28, 2024 · A Family of Physics-Based Models for Monolithic GaN Integration ... A 5.9-GHz Fully Integrated GaN Frontend Design With Physics-Based RF Compact ...

A Family of Physics-Based Models for Monolithic GaN Integration. BCICTS 2024 ... Physics-Based Compact Model for GaN-Based Non-linear Transmission Line Resistors.

Advances in GaN HEMT and GaN PA techniques for base-stations. Lan Wei, University of Waterloo, A Family of Physics-Based Models for Monolithic GaN Integration.

This paper presents a novel, comprehensive physics-based model for capturing non-ideal effects in GaN transmission line resistors for use in monolithic GaN ...

Advances in GaN HEMT and GaN PA techniques for base-stations. Lan Wei, University of Waterloo, A Family of Physics-Based Models for Monolithic GaN Integration.

Johan Alant's 2 research works with 1 citations, including: A Family of Physics-Based Models for Monolithic GaN Integration.

EPC has developed a first principle physics-based model to explain RDS(on) rise in GaN transistors under hard switching conditions. This article provides ...

Sep 6, 2022 · A vacuum field effect transistor (VacFET) is proposed that consists of a modification of a conventional AlGaN/GaN high electron mobility ...

High-performance NMOS GaN-based logic gates including NOT, NAND, and NOR by integration of E/D-mode GaN MOSHEMTs on silicon substrates are demonstrated

Nov 30, 2024 · A Family of Physics-Based Models for Monolithic GaN Integration. ... Physics-Based Compact Model for GaN-Based Non-linear Transmission Line ...