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VMOS

From Wikipedia, the free encyclopedia
The VMOS structure has a V-groove at the gate region

A VMOS (/ˈvmɒs/) (vertical metal oxide semiconductor or V-groove MOS) transistor is a type of metal–oxide–semiconductor field-effect transistor (MOSFET). VMOS is also used to describe the V-groove shape vertically cut into the substrate material.[1]

The "V" shape of the MOSFET's gate allows the device to deliver a higher amount of current from the source to the drain of the device. The shape of the depletion region creates a wider channel, allowing more current to flow through it.

During operation in blocking mode, the highest electric field occurs at the N+/p+ junction. The presence of a sharp corner at the bottom of the groove enhances the electric field at the edge of the channel in the depletion region, thus reducing the breakdown voltage of the device.[2] This electric field launches electrons into the gate oxide and consequently, the trapped electrons shift the threshold voltage of the MOSFET. For this reason, the V-groove architecture is no longer used in commercial devices.

The device's use was a power device until more suitable geometries, like the UMOS (or Trench-Gate MOS) were introduced in order to lower the maximum electric field at the top of the V shape and thus leading to higher maximum voltages than in case of the VMOS.

History

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The MOSFET was invented at Bell Labs between 1955 and 1960.[3][4][5][6][7][8] The V-groove construction was pioneered by Jun-ichi Nishizawa in 1969,[9] initially for the static induction transistor (SIT), a type of junction field-effect transistor (JFET).[10]

The VMOS was invented by Hitachi in 1969,[11] when they introduced the first vertical power MOSFET in Japan.[12] T. J. Rodgers, while he was a student at Stanford University, filed a US patent for a VMOS in 1973.[13] Siliconix commercially introduced a VMOS in 1975.[11] The VMOS later developed into what became known as the vertical DMOS (VDMOS).[14]

In 1978, American Microsystems (AMI) released the S2811.[15][16] It was the first integrated circuit chip specifically designed as a digital signal processor (DSP), and was fabricated using VMOS, a technology that had previously not been mass-produced.[16]

References

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  1. ^ Holmes, F.E.; Salama, C.A.T. (1974). "VMOS—A new MOS integrated circuit technology". Solid-State Electronics. 17 (8): 791–797. Bibcode:1974SSEle..17..791H. doi:10.1016/0038-1101(74)90026-4.
  2. ^ Baliga, B. Jayant (2008), "Power MOSFETs", Fundamentals of Power Semiconductor Devices, Springer US, pp. 276–503, doi:10.1007/978-0-387-47314-7_6, ISBN 9780387473130
  3. ^ Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
  4. ^ Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
  5. ^ KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5.
  6. ^ Lojek, Bo (2007). History of Semiconductor Engineering. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg. p. 321. ISBN 978-3-540-34258-8.
  7. ^ Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5.
  8. ^ Lojek, Bo (2007). History of Semiconductor Engineering. Springer Science & Business Media. p. 120. ISBN 9783540342588.
  9. ^ Duncan, Ben (1996). High Performance Audio Power Amplifiers. Elsevier. pp. 178 & 406. ISBN 9780080508047.
  10. ^ U.S. patent 4,295,267
  11. ^ Jump up to: a b "Advances in Discrete Semiconductors March On". Power Electronics Technology. Informa: 52–6. September 2005. Archived (PDF) from the original on 22 March 2006. Retrieved 31 July 2019.
  12. ^ Oxner, E. S. (1988). Fet Technology and Application. CRC Press. p. 18. ISBN 9780824780500.
  13. ^ U.S. patent 3,924,265
  14. ^ Duncan, Ben (1996). High Performance Audio Power Amplifiers. Elsevier. pp. 177-8, 406. ISBN 9780080508047.
  15. ^ "1979: Single Chip Digital Signal Processor Introduced". The Silicon Engine. Computer History Museum. Retrieved 14 October 2019.
  16. ^ Jump up to: a b Taranovich, Steve (August 27, 2012). "30 years of DSP: From a child's toy to 4G and beyond". EDN. Retrieved 14 October 2019.