arlとは 意味・読み方・使い方

After a plurality of trenches 111 for wiring are formed in an FSG film 109 and an ARL film 110 formed on a substrate 100, a barrier metal film (tantalum nitride film 112) and conducting films for wiring (copper films 113 and 114) are deposited in sequence on the ARL film 110, in such a manner that each of the trenches 111 is completely filled.例文帳に追加

基板１００上に形成されたＦＳＧ膜１０９及びＡＲＬ膜１１０に複数の配線用溝１１１を形成した後、各配線用溝１１１が完全に埋まるようにＡＲＬ膜１１０上にバリアメタル膜（窒化タンタル膜１１２）及び配線用導電膜（銅膜１１３及び１１４）を順次堆積する。 - 特許庁

After a plurality of trenches 111 for wiring are formed in an FSG film 109 and an ARL film 110 formed on a substrate 100, a barrier metal film (tantalum nitride film 112) and conducting films for wiring (copper films 113 and 114) are deposited in sequence on the ARL film 110, in such a manner that each of the trenches 111 is completely filled.例文帳に追加

基板１００上に形成されたＦＳＧ膜１０９及びＡＲＬ膜１１０に複数の配線用溝１１１を形成した後、各配線用溝１１１が完全に埋まるようにＡＲＬ膜１１０の上にバリアメタル膜（窒化タンタル膜１１２）及び配線用導電膜（銅膜１１３及び１１４）を順次堆積する。 - 特許庁

After foreign matters stuck to the substrate 100 in the polishing are eliminated, the surface of the ARL film 110 is polished by using an abrasive agent of the same kind as the polishing process of the copper films 113 and 114.例文帳に追加

その後、研磨時に基板１００に付着した異物を除去した後、銅膜１１３及び１１４の研磨工程と同じ種類の研磨剤を用いてＡＲＬ膜１１０の表面を研磨する。 - 特許庁

To provide a manufacturing method of a semiconductor device in which ARL is used for processing a silicon oxide film in the upper layer of a local interconnection tungsten film and subsequently even if passing through a high temperature film forming process, a defect due to the exfoliation of a boundary face between the local interconnection tungsten film and the silicon oxide film is prevented from occur.例文帳に追加

ローカル配線タングステン膜の上層のシリコン酸化膜の加工にＡＲＬを使用し、その後に高温の成膜プロセスを経ても、ローカル配線タングステン膜とシリコン酸化膜界面の膜剥がれによる欠陥の発生を抑制できる半導体装置の製造方法を提供することを目的とする。 - 特許庁