Paper
19 February 2013 A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack
Y. Koda, R. Kuroda, T. Nakazawa, Y. Nakao, S. Sugawa
Author Affiliations +
Abstract
In this work, by optimizing the structure and thickness of the on-chip multilayer dielectric stack using SiO2 and low extinction coefficient Si3N4 with the high UV-light sensitivity photodiode technology, high external Q.E. and high stability to UV-light were both successfully obtained. By changing the structure of on-chip multilayer dielectric stack and film thickness, we obtained the photodiode with the high external Q.E. in the desired UV-light region.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Koda, R. Kuroda, T. Nakazawa, Y. Nakao, and S. Sugawa "A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack", Proc. SPIE 8659, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, 86590J (19 February 2013); https://doi.org/10.1117/12.2005574
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photodiodes

Transmittance

Dielectrics

Multilayers

Silica

Silicon

Mass attenuation coefficient

Back to Top