Opens in a new windowOpens an external websiteOpens an external website in a new window
This website utilizes technologies such as cookies to enable essential site functionality, as well as for analytics, personalization, and targeted advertising. To learn more, view the following link: Privacy Policy
Loading [MathJax]/extensions/TeX/ietmacros.js
Innovative device source/drain and channel implantation for MOS transistors in ultra low power subthreshold circuit applications | IEEE Conference Publication | IEEE Xplore