We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a 162.5−nm-thin diode structure. The quantum dots are just 88nm from the top GaAs surface. We design and realize a p−i−n−i−n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below 2μeV, just a factor of 2 above the transform limit. Clear optical spin pumping is observed in a magnetic field of 0.5T in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots—highly coherent single-photon generation, ultrafast optical spin manipulation—in the thin diodes required in quantum nanophotonics and nanophononics applications.

• Received 20 July 2017
• Revised 10 October 2017

DOI:https://doi.org/10.1103/PhysRevB.96.165440