Abstract
We report a large factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction , the direction required for a coherent hole spin. The electrical field lies along the growth direction and is changed over a large range, 100 kV/cm. Both electron and hole factors are determined by high resolution laser spectroscopy with resonance fluorescence detection. This, along with the low electrical-noise environment, gives very high quality experimental results. The hole factor depends linearly on the electric field cm/kV, whereas the electron factor is independent of electric field cm/kV (results averaged over a number of quantum dots). The dependence of on is well reproduced by a model demonstrating that the electric field sensitivity arises from a combination of soft hole confining potential, an In concentration gradient, and a strong dependence of material parameters on In concentration. The electric field sensitivity of the hole spin can be exploited for electrically driven hole spin rotations via the tensor modulation technique and based on these results, a hole spin coupling as large as GHz can be envisaged.
- Received 12 December 2014
- Revised 5 March 2015
DOI:https://doi.org/10.1103/PhysRevB.91.165304
©2015 American Physical Society