Tunable semimetallic state in compressive-strained $\mathrm{SrIr}{\mathrm{O}}_{3}$ films revealed by transport behavior

Tunable semimetallic state in compressive-strained $SrIr O_{3}$ films revealed by transport behavior

Lunyong Zhang, Qifeng Liang, Ye Xiong, Binbin Zhang, Lei Gao, Handong Li, Y. B. Chen, Jian Zhou, Shan-Tao Zhang, Zheng-Bin Gu, Shu-hua Yao, Zhiming Wang, Yuan Lin, and Yan-Feng Chen

Phys. Rev. B 91, 035110 – Published 9 January 2015; Erratum Phys. Rev. B 92, 039904 (2015)

Abstract

Orthorhombic $SrIr O_{3}$ is a typical spin-orbit-coupled correlated metal that shows diversified physical properties under external stimuli. Here the nonlinear Hall effect and weakly temperature-dependent resistance are observed in a $SrIr O_{3}$ film epitaxially grown on a $SrTi O_{3}$ substrate. It infers that orthorhombic $SrIr O_{3}$ is a semimetal oxide. However, a linear Hall effect and insensitive-temperature-dependent resistance are observed in $SrIr O_{3}$ films grown on $(La, Sr) (Al, Ta) O_{3}$ (LSAT) substrates, suggesting a tunable semimetallic state due to a band structure change in $SrIr O_{3}$ films under different compressive strains. The mechanism of this evolution is explored in detail through a strain-state analysis by reciprocal space mapping and electron diffraction, carrier density and mobility calculations, as well as electronic band structure evolution under compressive strain (predicted by a tight-binding approximation). It might suggest that the strain-induced band shift leads to semimetallic tuning in the $SrIr O_{3}$ film grown on $SrTi O_{3}$ to LSAT substrates. Our findings illustrate the tunability of $SrIr O_{3}$ properties and pave the way to induce different physical states in $SrIr O_{3}$ , such as the proposed topological insulator state in heterostructures.

Received 18 June 2014
Revised 8 October 2014

DOI:https://doi.org/10.1103/PhysRevB.91.035110

Erratum

Erratum: Tunable semimetallic state in compressive-strained ${SrIrO}_{3}$ films revealed by transport behavior [Phys. Rev. B 91, 035110 (2015)]

Lunyong Zhang, Qifeng Liang, Ye Xiong, Binbin Zhang, Lei Gao, Handong Li, Y. B. Chen, Jian Zhou, Shan-Tao Zhang, Zheng-Bin Gu, Shu-hua Yao, Zhiming Wang, Yuan Lin, and Yan-Feng Chen

Phys. Rev. B 92, 039904 (2015)

Authors & Affiliations

Lunyong Zhang^1,*, Qifeng Liang², Ye Xiong³, Binbin Zhang¹, Lei Gao⁴, Handong Li⁴, Y. B. Chen^5,†, Jian Zhou¹, Shan-Tao Zhang¹, Zheng-Bin Gu¹, Shu-hua Yao^1,‡, Zhiming Wang⁴, Yuan Lin⁴, and Yan-Feng Chen¹

¹National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
²Department of Physics, Shaoxing University, Shaoxing 312000, People's Republic of China
³College of Physical Science and Technology, Nanjing Normal University, Nanjing 210093, People's Republic of China
⁴State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
⁵National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China

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Vol. 91, Iss. 3 — 15 January 2015

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Figure 1
(a), (b) XRD θ-2θ patterns of the SIO films grown on STO and LSAT substrates, respectively. (c), (d) Low-magnification TEM image and electron diffraction pattern $([1, - 3, 0]$ zone axis of STO) taken from the area covering both the SIO film and STO substrate. (e) AFM images of the sample SIO films grown on a STO substrate. (f) Reciprocal space mapping (RSM) around the pseudocubic (310) reflection of the STO substrate. (g), (h) Low-magnification TEM image and electron diffraction pattern $([1, - 3, 0]$ zone axis of LSAT) taken from the area covering both the SIO film and LSAT substrate, respectively. (i) AFM images of the sample SIO films grown on a LSAT substrate. (j) RSM around the pseudocubic (013) reflection of the LSAT substrate. The split spots assigned to the LSAT substrate in (j) are ascribed to some grains with crystalline orientations slightly deviating from the orientation of a perfect (001)-LSAT substrate.
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Figure 2
Temperature-dependent resistance of SIO films grown on STO and LSAT substrates. (a) Raw data of sheet resistance. At high temperatures, the resistance of the SIO/STO film is proportional to temperature. The data of Ref. [11] have also been added for comparison. (b) Plots of conductance $G$ vs $\ln T$ according to weak localization.
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Figure 3
(a), (b) The Hall effect of the SIO/STO film and the SIO/LSAT film, respectively, showing an obvious nonlinear variation in (a) and a near linear variation in (b). The inset in (a) shows the Hall coefficient variation with $B$ . (c), (d) Dependence of magnetoresistance (MR) of the films on the magnetic field. At the low field limit, the $MR \propto B^{2}$ relation held for the two-carrier transport system. (e), (f) Plots of the temperature-dependent mobility and carrier concentration. In (f), the temperature-dependent density asymmetry in these two samples is also shown. (g), (h) Temperature-dependent effective magnetic field $B_{i}$ and $B_{SOC}$ of SIO grown on STO and LSAT substrates, respectively. The dots in (a)–(d) correspond to the raw data and the curves are the fitted results.
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Figure 4
Valence state XPS spectra of the SIO films grown on STO and LSAT substrates.
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Figure 5
(a)–(c) Electronic band structures, calculated by the tight-binding approximated Hamiltonian, that show the semimetallic electron structure evolution without and with compressive strain simulated as decreasing $t, t^{'}$ , and $t_{x y}$ , respectively. (d) Electron band structure without and with compressive strain (decreasing all of $t, t^{'}$ , and $t_{x y})$ .
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Physical Review B

covering condensed matter and materials physics

Tunable semimetallic state in compressive-strained $SrIr O_{3}$ films revealed by transport behavior

Lunyong Zhang, Qifeng Liang, Ye Xiong, Binbin Zhang, Lei Gao, Handong Li, Y. B. Chen, Jian Zhou, Shan-Tao Zhang, Zheng-Bin Gu, Shu-hua Yao, Zhiming Wang, Yuan Lin, and Yan-Feng Chen

Phys. Rev. B 91, 035110 – Published 9 January 2015; Erratum Phys. Rev. B 92, 039904 (2015)

Abstract

Erratum

Erratum: Tunable semimetallic state in compressive-strained ${SrIrO}_{3}$ films revealed by transport behavior [Phys. Rev. B 91, 035110 (2015)]

Lunyong Zhang, Qifeng Liang, Ye Xiong, Binbin Zhang, Lei Gao, Handong Li, Y. B. Chen, Jian Zhou, Shan-Tao Zhang, Zheng-Bin Gu, Shu-hua Yao, Zhiming Wang, Yuan Lin, and Yan-Feng Chen

Phys. Rev. B 92, 039904 (2015)

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Physical Review B

covering condensed matter and materials physics

Tunable semimetallic state in compressive-strained SrIrO3 films revealed by transport behavior

Lunyong Zhang, Qifeng Liang, Ye Xiong, Binbin Zhang, Lei Gao, Handong Li, Y. B. Chen, Jian Zhou, Shan-Tao Zhang, Zheng-Bin Gu, Shu-hua Yao, Zhiming Wang, Yuan Lin, and Yan-Feng Chen

Phys. Rev. B 91, 035110 – Published 9 January 2015; Erratum Phys. Rev. B 92, 039904 (2015)

Abstract

Erratum

Erratum: Tunable semimetallic state in compressive-strained SrIrO3 films revealed by transport behavior [Phys. Rev. B 91, 035110 (2015)]

Lunyong Zhang, Qifeng Liang, Ye Xiong, Binbin Zhang, Lei Gao, Handong Li, Y. B. Chen, Jian Zhou, Shan-Tao Zhang, Zheng-Bin Gu, Shu-hua Yao, Zhiming Wang, Yuan Lin, and Yan-Feng Chen

Phys. Rev. B 92, 039904 (2015)

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Tunable semimetallic state in compressive-strained $SrIr O_{3}$ films revealed by transport behavior

Erratum: Tunable semimetallic state in compressive-strained ${SrIrO}_{3}$ films revealed by transport behavior [Phys. Rev. B 91, 035110 (2015)]