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ORCIDMicroelectronics Journal, Volume 36
Volume 36, Number 1, January 2005
- G. E. Zardas, P. H. Yannakopoulos, M. Ziska, Chrys I. Symeonides, P. C. Euthymiou, O. Csabay:
Dependence of GaAs: Si persistent photoconductivity on temperature and alpha-particle irradiation. 1-4 - Emmanuel M. Drakakis:
Approximate process-parameter-dependent study of the logarithmic domain lossy integrator harmonic distortion levels. 5-23 - H. Choi, Eui Kwan Koh, Yong Min Cho, Junggeun Jin, Dongjin Byun, Minjoong Yoon
:
Effects of extended dislocations on charge distribution in GaN epilayer. 25-28 - Nian Zhan, M. C. Poon, Hei Wong, K. L. Ng, Chi-Wah Kok:
Dielectric breakdown characteristics and interface trapping of hafnium oxide films. 29-33 - Yang-Kuao Kuo, Chuen-Guang Chao:
Analysis of the effects of reflectance and refraction generated by wafers made from fused silica, ALOxNy and TiSixNy under different light sources on pattern length and best focus. 35-39 - Yongshik Kim, Kunihiro Miyauchi, Shun'ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai:
Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation. 41-49 - Marco Antonio Robert Alves, D. F. Takeuti, Edmundo S. Braga:
Fabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching. 51-54 - Te-Hua Fang, Win-Jin Chang, Sung-Lin Tsai:
Nanomechanical characterization of polymer using atomic force microscopy and nanoindentation. 55-59 - A. H. You, Duu Sheng Ong:
Full-band Monte Carlo simulation of thin InP p+-i-n+ diodes. 61-65 - Uygar Avci, Sandip Tiwari:
A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception. 67-75 - Miguel A. Méndez, José Luis González, Diego Mateo, Antonio Rubio:
An investigation on the relation between digital circuitry characteristics and power supply noise spectrum in mixed-signal CMOS integrated circuits. 77-84 - K. T. Kaschani:
Electrical overstress due to ESD induced displacement currents. 85-90 - S. B. Wang, S. B. Zhou, G. Huang, B. F. Xiong, S. H. Chen, X. J. Yi:
Fabrication of 128×128 element optical switch array by micromachining technology. 91-95 - Ming-Sze Tong, Yilong Lu, Yinchao Chen, Mingwu Yang, Qunsheng Cao, Viktor Krozer, Rüdiger Vahldieck:
Corrigendum to: Design and analysis of planar printed microwave and PBG filters using an FDTD method. 97
Volume 36, Number 2, February 2005
- Lotfi Beji, L. Bouzaïene, B. Ismaïl, Laarbi Sfaxi, Hichem Maaref, Hafedh Ben Ouada:
Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate. 99-103 - Xiao Buwen, Shang Yafeng, Meng Meng, Li Chuannan:
Enhancement of hole injection with an ultra-thin Ag2O modified anode in organic light-emitting diodes. 105-108 - Z. W. Zhong, S. C. Lim, Anand K. Asundi:
Effects of thermally induced optical fiber shifts in V-groove arrays for optical MEMS. 109-113 - A. Belghachi:
Modelling of perimeter recombination in GaAs solar cells. 115-124 - Yong-ning He, Jing-wen Zhang, Xiaodong Yang, Qing-an Xu, Xinghui Liu, Chang-Chun Zhu, Xun Hou:
Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE. 125-128 - F. K. Yam, Zainuriah Hassan:
Innovative advances in LED technology. 129-137 - Cristian Chitu, Manfred Glesner:
An FPGA implementation of the AES-Rijndael in OCB/ECB modes of operation. 139-146 - Wen-Tsong Shiue:
Power/area/delay aware FSM synthesis and optimization. 147-162 - Nikolaos D. Zervas, George Theodoridis, Dimitrios Soudris:
Behavioral-level event-driven power management for DECT digital receivers. 163-172
Volume 36, Numbers 3-6, March-June 2005
- Mohamed Henini, Isaac Hernández-Calderón:
Preface. 173-174 - Dieter Bimberg, Matthias Kuntz, Matthias Laemmlin:
Quantum dot photonic devices for lightwave communication. 175-179 - Vittorianna Tasco, B. Potì, Massimo de Vittorio, Milena De Giorgi, Roberto Cingolani, A. Passaseo:
Improved performances of 1.3mum InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition. 180-182 - G. Sun, Richard A. Soref, Jacob B. Khurgin:
A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps. 183-185 - T. V. Torchynska, H. M. Alfaro Lopez, J. L. Casas Espinola, P. G. Eliseev, A. Stintz, K. J. Malloy, Ramon Peña-Sierra, Eu. Shcherbina:
Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power. 186-189 - J. S. Yim, J. H. Lee, Y. D. Jang, Moon-Deock Kim, Donghan Lee, H. D. Kim, S. H. Pyun, W. G. Jeong, J. S. Kim, S. U. Hong:
Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5mum laser diodes. 190-193 - A. F. G. Monte, J. F. R. Cunha, M. A. P. Soler, S. W. Silva, A. A. Quivy, Paulo César de Morais:
Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3mum. 194-196 - Simon Frédérick, Dan Dalacu, Daniel Poitras, Geof C. Aers, Philip J. Poole, Jacques Lefebvre, D. Chithrani, Robin L. Williams:
Near-infrared single photon sources employing site-selected InAs/InP quantum dot microcavities. 197-199 - Milena De Giorgi, G. Rainò, T. Todaro, Massimo de Vittorio, Vittorianna Tasco, A. Passaseo, Roberto Cingolani:
Photomodulated reflectance studies of quantum dot in MCLED structures: monitoring cavity-ground state exciton resonance. 200-202 - Sung-Ho Hwang, J. C. Shin, Jin Dong Song, Won Jun Choi, Jung-Il Lee, H. Han:
Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment. 203-206 - Daniel S. Raimundo, Adriana B. Stelet, Francisco J. R. Fernandez, Walter J. Salcedo:
Self-assembled systems obtained by chemical and electrochemical techniques for photonic crystal fabrication. 207-211 - Raphael Tsu:
Stability issues in tunneling via quantum systems. 212-215 - Takashi Hanada, Takafumi Yao:
Formation and evolution of strain-induced self-assembled dot. 216-218 - S. L. Morelhão, L. H. Avanci, R. Freitas, A. A. Quivy:
Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning. 219-222 - B. Sherliker, P. Harmer, M. P. Halsall, P. Buckle, P. J. Parbrook, T. Wang:
Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN. 223-226 - H. Pettersson, L. Landin, Ying Fu, M. Kleverman, Magnus Borgström, Werner Seifert, Lars Samuelson:
Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP. 227-230 - Carlos Alberto Duque, N. Porras-Montenegro, Z. Barticevic, Monica Pacheco, Luiz Eduardo Oliveira:
Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure. 231-233 - N. O. Dantas, A. F. G. Monte, W. A. Cardoso, A. G. Brito-Madurro, J. M. Madurro, Paulo César de Morais:
Growth and characterisation of ZnO quantum dots in polyacrylamide. 234-236 - Andrei Andreev, Francesco Quochi, Helmut Sitter, Harald Hoppe, Niyazi Serdar Sariciftci, Andrea Mura, Giovanni Bongiovanni:
Blue emitting self-assembled nano-crystals of para-sexiphenyl grown by hot wall epitaxy. 237-240 - A. M. Alcalde, O. O. Diniz Neto, G. E. Marques:
Spin relaxation due to the phonon modulation of the spin-orbit interaction in quantum dots. 241-243 - F. A. P. Osório, A. B. A. Marques, P. C. M. Machado, A. N. Borges:
The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1-x as quantum dots. 244-246 - Katsumoto Ikeda, Fujio Minami, Nobuyuki Koguchi:
Acoustical phonon dephasing in GaAs quantum dots. 247-249 - K. Daneshvar, K. Kang, Raphael Tsu:
Three-dimensional quantum dot array. 250-252 - Alexander N. Korotkov:
Quantum feedback of a double-dot qubit. 253-255 - G. J. Brown, F. Szmulowicz, H. Haugan, K. Mahalingam, S. Houston:
Design of InAs/Ga(In)Sb superlattices for infrared sensing. 256-259 - M. El Tahchi, E. Nassar, P. Mialhe:
Study and development of a silicon infrared diode operating under forward bias. 260-263 - Igor A. Sukhoivanov, O. V. Mashoshyna, V. K. Kononenko, D. V. Ushakov:
How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers. 264-268 - Keiko Takase, Yukio Kawano, Tohru Okamoto:
Time response of a highly sensitive and tunable THz detector using the quantum hall effect. 269-271 - Kameshwar K. Yadavalli, Alexei O. Orlov, Gregory L. Snider, Jeffrey Elam:
Aluminum oxide tunnel barriers for single electron memory devices. 272-276 - M. D. B. Charlton, M. E. Zoorob, M. C. Netti, N. Perney, G. J. Parker, P. Ayliffe, J. J. Baumberg:
Realisation of ultra-low loss photonic crystal slab waveguide devices. 277-281 - Jiun Haw Chu, O. Voskoboynikov, C. P. Lee:
Slow light in photonic crystals. 282-284 - O. Bendix, J. A. Méndez-Bermúdez, German A. Luna-Acosta, Ulrich Kuhl, Hans-Jürgen Stöckmann:
Design of beam splitters and microlasers using chaotic waveguides. 285-288 - José Azaña, Mykola Kulishov:
Optical pulse shaping capabilities of grating-assisted codirectional couplers. 289-293 - Pratyush Das Kanungo, Alexandra Imre, Bin Wu, Alexei O. Orlov, Gregory L. Snider, Wolfgang Porod, Nicholas P. Carter:
Gated hybrid Hall effect device on silicon. 294-297 - O'Dae Kwon, M. J. Kim, S.-J. An, Dongkwon Kim, Seung Eun Lee:
Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device. 298-300 - Samson Mil'shtein, J. Palma:
Heterostructure transistor with tunable gate bias. 301-303 - Ravi K. Kummamuru, Mo Liu, Alexei O. Orlov, Craig S. Lent, Gary H. Bernstein, Gregory L. Snider:
Temperature dependence of the locked mode in a single-electron latch. 304-307 - Xiangning Luo, Alexei O. Orlov, Gregory L. Snider:
Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips. 308-312 - Samson Mil'shtein, C. Gil, Peter Ersland:
Heterojunction semiconductor triode - a new vertical device. 313-315 - Samson Mil'shtein, C. Liessner:
High speed switch using pairs of pHEMTs with shifted gates. 316-318 - Samson Mil'shtein:
Shaping electrical field in heterostructure transistors. 319-322 - Santhosh Krishnan, Dragica Vasileska, Massimo V. Fischetti:
Hole transport in p-channel Si MOSFETs. 323-326 - W. R. Clarke, Adam P. Micolich, A. R. Hamilton, M. Y. Simmons, Koji Muraki, Y. Hirayama:
Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET. 327-330 - C.-T. Liang, Masaya Kataoka, G. Faini, D. Mailly, M. Y. Simmons, A. W. Rushforth, C. G. Smith, David A. Ritchie, M. Pepper:
Evidence for a finite compressibility of a quasi-one-dimensional ballistic channel. 331-333 - Jesús Iñarrea, Gloria Platero:
Microwave-induced zero-resistance states on 2D electron gas: theoretical explanation and temperature dependence. 334-337 - N. L. Ivina, L. K. Orlov, V. B. Shevtsov, N. A. Alyabina:
Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers. 338-341 - Juan C. Salcedo-Reyes, Isaac Hernández-Calderón:
Symmetry properties and electronic band structure of ordered Zn0.5Cd0.5Se alloys. 342-346 - S. J. Vlaev, Isaac Rodríguez-Vargas, Luis Manuel Gaggero-Sager:
Mean life times of quasi-bound states in delta-doped GaAs quantum wells. 347-349 - Oleksiy V. Shulika, Ivan M. Safonov, Igor A. Sukhoivanov, Volodimir V. Lysak:
Quantum capture area in layered quantum well structures. 350-355 - Yara Galvão Gobato, Maria José Santos Pompeu Brasil, Ihosvany Camps, Hugo Bonette de Carvalho, Lara F. dos Santos, Gilmar Eugênio Marques, Mohamed Henini, Laurence Eaves, G. Hill:
Charge buildup effects in asymmetric p-type resonant tunneling diodes. 356-358 - M. G. Bezerra, José Alexander de King Freire, V. N. Freire, Gil de Aquino Farias, F. M. S. Lima, A. L. A. Fonseca, O. A. C. Nunes Jr.:
Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices. 359-361 - Adrián Alfaro-Martínez, Isaac Hernández-Calderón:
Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe. 362-365 - R. G. Mani:
AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices. 366-368 - Carlos L. Beltrán Ríos, N. Porras-Montenegro:
Pressure and magnetic field effects on the binding energy of excitonic states in single and coupled GaAs-AlGaAs quantum wells. 369-373 - Tatiana Prutskij, Claudio Pelosi, Raul A. Brito-Orta:
Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques. 374-378 - Ed T. Croke, R. N. Schwartz, B. Shi, A. A. Narayanan, Andrey A. Kiselev, Mark F. Gyure:
Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells. 379-382 - Pablo Villamil, Carlos Cabra, N. Porras-Montenegro:
Excited states and infrared transition energies of a donor impurity in cylindrical GaAs-Ga0.6Al0.4As quantum well wires under the action of an applied magnetic field. 383-388 - Jhang W. Lee, Young Woo Ahn, Jae Ho Song, Byung Gyu Cho, Il Ho Ahn:
AlGaAs/InGaAs PHEMT with multiple quantum wire gates. 389-391 - Jong Chang Yi:
Self-consistent analysis of the miniband structures in superlattice quantum wires. 392-395 - M. L. Orlov, Yu. A. Romanov, L. K. Orlov:
Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field. 396-400 - Pedro Pereyra, A. Velasco-Chávez:
Absence of Wannier-Stark ladders in finite superlattices. 401-403 - Isaac Rodríguez-Vargas, Luis Manuel Gaggero-Sager:
Thomas-Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations. 404-406 - D. H. A. L. Anselmo, A. L. Dantas, S. K. Medeiros, G. A. Farias, Eudenílson L. Albuquerque:
Optical phonon modes confinement in quasiperiodic semiconductor superlattice. 407-410 - Diosdado Villegas, Fernando de León-Pérez, Rolando Pérez-Alvarez:
Gaussian superlattice for phonons. 411-412 - Miguel Eduardo Mora-Ramos, Vivechana Agarwal, J. A. Soto Urueta:
Propagation of light in quasi-regular dielectric heterostructures with delta-like layers. 413-415 - Luis Manuel Gaggero-Sager, Miguel Eduardo Mora-Ramos, Miguel Angel Olivares-Robles:
Calculation of electronic properties in AlxGa1-x delta-doped systems. 416-418 - Pedro Pereyra, Alfonso Anzaldo-Meneses:
Electronic transport and interfering phenomena induced by transverse electric field. 419-421 - Hiroyuki Shima, Tsuneyoshi Nakayama:
Breakdown of Anderson localization in disordered quantum chains. 422-424 - R. Nemutudi, C.-T. Liang, M. J. Murphy, Harvey E. Beere, C. G. Smith, David A. Ritchie, M. Pepper, G. A. C. Jones:
Jain-Kivelson-type resonance as a noninvasive probe of screening in the quantum Hall regime. 425-427 - Shang-Chia Chen, Shih-Kai Lin, Kun-Ta Wu, Chao-Ping Huang, Pen-Hsiu Chang, N. C. Chen, Chin-An Chang, Hsian-Chu Peng, Chuang-Feng Shih, Kuo-Shung Liu:
Transport measurements on MOVPE-grown InN films. 428-430 - R. B. de Almeida, A. N. Borges, P. C. M. Machado, F. A. P. Osório:
Confinement effect on the intradonor 1s-2p+ transition energies in GaN quantum wells. 431-433 - S. C. P. Rodrigues Jr., Guilherme Matos Sipahi, Eronides Felisberto da Silva Júnior:
Optical and electronic properties of AlInGaN/InGaN superlattices. 434-437 - Peter Kordos, Jan Bernát, Michel Marso:
Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT. 438-441 - J. Misiewicz, R. Kudrawiec, Marcin Syperek, R. Paszkiewicz, B. Paszkiewicz, M. Tlaczala:
Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy. 442-445 - J. Misiewicz, R. Kudrawiec, M. Motyka, J. Andrzejewski, D. Gollub, Alfred Forchel:
Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells. 446-449 - G. Sun, Richard A. Soref:
Design and simulation of a GaN/AlGaN quantum cascade laser for terahertz emission. 450-452 - H. J. Lozykowski, W. M. Jadwisienczak, A. Bensaoula, O. Monteiro:
Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN. 453-455 - Ryan Buckmaster, J. H. Yoo, K. Shin, Y. Yao, Takashi Sekiguchi, M. Yokoyama, Takashi Hanada, Takenari Goto, M. Cho, Yoshiyuki Kawazoe:
GaN nanodot fabrication by implant source growth. 456-459 - Ashwin Ashok, Richard Akis, Dragica Vasileska, David K. Ferry:
Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures. 460-462 - A. C. R. Bittencourt, J. F. Estanislau, G. E. Marques:
Spin-polarized charge fluctuations in magnetic tunneling diodes. 463-465 - Tsai-Yu Huang, Chao-Ping Huang, Yi-Hsing Chiu, C.-T. Liang, M. Y. Simmons, David A. Ritchie:
'Mobility gap' of a spin-split GaAs two-dimensional electron gas. 466-468 - Da-Ren Hang, R. B. Dunford, Gil-Ho Kim, H. D. Yeh, C. F. Huang, David A. Ritchie, Ian Farrer, Y. W. Zhang, C.-T. Liang, Y. H. Chang:
Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect. 469-471 - O. Navarro, V. Men'shov, V. Tugushev:
Spin ordering in chromium layered structures with inserted nonmagnetic monolayers. 472-474 - M. S. Tomar, Surinder P. Singh, O. Perales-Pérez, R. P. Guzman, E. Calderón-Ortiz, Carlos M. Rinaldi-Ramos:
Synthesis and magnetic behavior of nanostructured ferrites for spintronics. 475-479 - G. E. Marques, A. C. R. Bittencourt, Victor Lopez-Richard, Carlos Destefani, Sergio E. Ulloa:
Spin carrier dynamics under full spin-orbit coupling. 480-483 - K. C. Seo, G. H. Ihm, S. J. Lee:
Spin-polarized tunneling in an electromagnetic structure. 484-487 - V. Tugushev, E. Kulatov, O. Navarro:
The mechanism of interlayer exchange coupling in silicon/iron layered structures. 488-490 - Surinder P. Singh, M. S. Tomar, Y. Ishikawa:
Experimental and theoretical studies of LiNi1/3Mn1/3M1/3O2 [M=Mo and Rh] for cathode material. 491-494 - G. Ortega-Cervantez, G. Rueda-Morales, J. Ortiz-López:
Catalytic CVD production of carbon nanotubes using ethanol. 495-498 - Solange Binotto Fagan, Silvete Guerini, J. Mendes Filho, Viola Lemos:
Lithium intercalation into single-wall carbon nanotube bundles. 499-501 - Victor Ovchinnikov, Serguei Novikov, T. Toivola, J. Sinkkonen:
Electroluminescence from B- and P-doped silicon nanoclusters. 502-505 - Andreas Fissel, C. Wang, E. Bugiel, H. Jörg Osten:
Epitaxial growth of non-cubic silicon. 506-509 - A. Vivas Hernandez, T. V. Torchynska, Y. Matsumoto, Sergio Jiménez-Sandoval, M. Dybiec, S. Ostapenko, L. V. Shcherbina:
Optical investigation of Si nano-crystals in amorphous silicon matrix. 510-513 - E. Chambon, E. Florentin, T. V. Torchynska, J. González-Hernández, Y. V. Vorobiev:
Optical properties of porous silicon surface. 514-517 - L. K. Orlov, N. L. Ivina, A. V. Potapov, T. N. Smyslova, L. M. Vinogradsky, Z. J. Horvath:
Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures. 518-521 - M. Alper Sahiner, Daniel F. Downey, Steven W. Novak, Joseph C. Woicik, Dario A. Arena:
The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques. 522-526 - Adriana E. Martínez-Cantón, Miguel García-Rocha, Isaac Hernández-Calderón, R. Ortega-Martínez:
Thermal quenching of the self-activated band of ZnSe: Cl thin films grown by molecular beam epitaxy. 527-530 - C. L. Heng, T. G. Finstad, Y. J. Li, A. E. Gunnæs, A. Olsen, P. Storås:
Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing. 531-535 - T. V. Torchynska, A. I. Diaz Cano, Sergio Jiménez-Sandoval, M. Dybiec, S. Ostapenko, Marina Mynbaeva:
Photoluminescence and Raman spectroscopy in porous SiC. 536-538 - O. Millo, I. Asulin, A. Sharoni, O. Yuli, G. Koren:
The superconductor proximity effect in Au-YBa2Cu3O7-delta bilayer films: the role of order parameter anisotropy. 539-542 - Oscar Blanco-Alonso, E. Martínez, J. Heiras, J. Siqueiros, A. G. Castellanos-Guzmán:
Growth and properties of Pb(Zr0.53Ti0.47)O3 thin films. 543-545 - Xiaojun Wang, Zhiyi He, Dongdong Jia, Wieslaw Strek, R. Dariusz, Dariusz Hreniak, W. M. Yen:
Crystal size dependence of the persistent phosphorescence in Sr2ZnSi2O7: Eu2+, Dy3+. 546-548 - Xiu-Tian Zhao, Kenji Sakka, Naoto Kihara, Yasuyuki Takada, Makoto Arita, Masataka Masuda:
Structure and photo-induced features of TiO2 thin films prepared by RF magnetron sputtering. 549-551 - Milena De Giorgi, D. Tarì, L. Manna, Roman Krahne, Roberto Cingolani:
Optical properties of colloidal nanocrystal spheres and tetrapods. 552-554 - Juan M. Camacho, A. I. Oliva:
Morphology and electrical resistivity of metallic nanostructures. 555-558 - Vitaliy N. Pustovit, Tigran V. Shahbazyan:
Quantum-size effects in SERS from noble-metal nanoparticles. 559-563 - O. Voskoboynikov, Georgi Dyankov, C. M. J. Wijers:
Left handed composite materials in the optical range. 564-566 - Andrea Antunes, T. G. Amaral, G. E. S. Brito, Eduardo Abramof, S. L. Morelhão:
Roughness and nanoholes in sol-gel thin films. 567-569 - Sergio A. Tomás, Rodolfo Palomino, R. Lozada, E. F. da Silva Jr, Elder A. de Vasconcelos, W. M. de Azevedo, C. Persson, I. Pepe, Dennis G. F. David, Antônio Ferreira da Silva:
Optical and electronic characterization of the band structure of blue methylene and rhodamine 6G-doped TiO2 sol-gel nanofilms. 570-573 - M. S. Tomar, R. E. Melgarejo, Surinder P. Singh:
Leakage current and ferroelectric memory in Nd and Sm substituted Bi4Ti3O12 films. 574-577 - Kazunari Ozasa, Mizuo Maeda, Masahiko Hara:
Photoluminescence behavior of CdSe on GaAsOx/GaAs substrates. 578-580 - Miguel L. Crespillo, J. L. Sacedón, B. A. Joyce, P. Tejedor:
Kinetically driven self-organization during hydrogen-assisted MBE growth on GaAs(110). 581-585 - Hiroyuki Shima, Tsuneyoshi Nakayama:
Enhanced orientation of interacting polar molecules. 586-588 - E. F. Nobre, G. A. Farias, A. N. da Silva, R. Moretzsohn:
Propagation of polaritons in coaxial multi-shell cylinders. 589-591 - Yukio Kawano, Takuya Okamoto:
A new type of scanning probe microscope: combination between an electrometer and a THz microscope. 592-595 - Jorge-Alejandro Reyes-Esqueda, Carlos I. Mendoza, Marcelo del Castillo-Mussot, Gerardo J. Vázquez:
Stark effect on a geometry defined by a cake's slice. 596-598 - T. M. Razykov:
A novel chemical molecular beam deposition method for fabrication of II-VI low dimensional structures. 599-600 - Z. Moktadir, Michael Kraft:
Wavelet analysis of coarsening during unstable MBE growth. 601-604 - P. G. Bolcatto, E. C. Goldberg, M. C. G. Passeggi:
Molecular conduction using the parameter-free bond-pair model. 605-607 - Z. Moktadir, H. Wensink, Michael Kraft:
Analytical model of micromachining of brittle materials with sharp particles. 608-611
Volume 36, Number 7, July 2005
- Bernard Courtois:
Special issue on European Micro and Nano Systems (EMN04) held in Paris, 20-21 October, 2004. 613 - Giuseppe Iannaccone:
Perspectives and challenges in nanoscale device modeling. 614-618 - Gary H. Bernstein, Alexandra Imre, V. Metlushko, Alexei O. Orlov, L. Zhou, L. Ji, György Csaba, Wolfgang Porod:
Magnetic QCA systems. 619-624 - Yamin Leprince-Wang, A. Yacoubi-Ouslim, G. Y. Wang:
Structure study of electrodeposited ZnO nanowires. 625-628 - Kuniyuki Kakushima, Tarik Bourouina, T. Sarnet, G. Kerrien, D. Débarre, J. Boulmer, Hiroyuki Fujita:
Silicon periodic nano-structures obtained by laser exposure of nano-wires. 629-633 - N. N. Dzbanovsky, V. V. Dvorkin, V. G. Pirogov, N. V. Suetin:
The aligned Si nanowires growth using MW plasma enhanced CVD. 634-638 - Ibrahima Kante, Thierry Devers, Rachid Harba, Caroline Andreazza-Vignolle, Pascal Andreazza:
Electrical behaviour of fractal nanosized tin dioxide films prepared by electrodeposition for gas sensing applications. 639-643 - Bradley E. Layton, Stephanie M. Sullivan, John J. Palermo, Gregory J. Buzby, Rishi Gupta, Richard E. Stallcup III:
Nanomanipulation and aggregation limitations of self-assembling structural proteins. 644-649 - Nicolle Wilke, A. Mulcahy, S.-R. Ye, A. Morrissey:
Process optimization and characterization of silicon microneedles fabricated by wet etch technology. 650-656 - Haifa El-Sadi, Nabil Esmail:
Simulation of complex liquids in micropump. 657-666 - Jemmy S. Bintoro, Peter J. Hesketh, Yves H. Berthelot:
CMOS compatible bistable electromagnetic microvalve on a single wafer. 667-672 - Frédéric Marty, Lionel Rousseau, Bassam Saadany, B. Mercier, Olivier Français, Y. Mita, Tarik Bourouina:
Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures. 673-677 - Gen-Wen Hsieh, Ching-Hsiang Tsai, Wei-Chih Lin:
Anodic bonding of glass and silicon wafers with an intermediate silicon nitride film and its application to batch fabrication of SPM tip arrays. 678-682 - A. Pavolotsky, D. Meledin, C. Risacher, M. Pantaleev, V. Belitsky:
Micromachining approach in fabricating of THz waveguide components. 683-686
Volume 36, Number 8, August 2005
- J. W. Wan, Wen-Jun Zhang, D. J. Bergstrom:
Influence of transient flow and solder bump resistance on underfill process. 687-693 - R. Al Asmar, G. Ferblantier, J. L. Sauvajol, Alain Giani, A. Khoury, A. Foucaran:
Fabrication and characterisation of high quality ZnO thin films by reactive electron beam evaporation technique. 694-699 - Adam Augustin, Bartosz Maj, Arno Kostka:
A structure oriented compact thermal model for multiple heat source ASICs. 700-704 - M. A. Mastro, J. R. LaRoche, N. D. Bassim, C. R. Eddy:
Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT. 705-711 - Han-Chang Tsai:
Investigation of electromagnetic radiation induced by conducting wire of nanometer multi-quantum well device on InGaN LED. 712-717 - N. G. Shankar, Z. W. Zhong:
A new rule-based clustering technique for defect analysis. 718-724 - C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang:
The electronic structures and optical properties of BaTiO3 and SrTiO3 using first-principles calculations. 725-728 - T. K. H. Starke, Petar Igic:
Feedback supported isolation structure for blocking of minority leakage carriers in power integrated circuits. 729-731 - M. Alvaro, Alina Caddemi, Giovanni Crupi, Nicola Donato:
Temperature and bias investigation of self heating effect and threshold voltage shift in pHEMT's. 732-736 - Xi-Ning Wang, Xiao-Lin Zhao, Yong Zhou, Xu-Han Dai, Bing-Chu Cai:
Fabrication and performance of novel RF spiral inductors on silicon. 737-740 - Fengming Zhang, Rui Tang, Yong-Bin Kim:
SET-based nano-circuit simulation and design method using HSPICE. 741-748 - Grace Wang, S. Balakumar, S. C. Hwee, Rakesh Kumar, T. Hara:
Enhancement of adhesion strength of Cu layer with low dielectric constant SiC: H liners in Cu interconnects. 749-753 - Costas Psychalinos:
Switched-current (SI) integrators with reduced effect of transistor mismatches. 754-762 - Erik Hernández, Roc Berenguer, Jon Legarda, Jaizki Mendizabal, Iosu Cendoya:
An integrated up-converter circuit in 0.8mum SiGe technology for TV applications. 763-769 - Jee-Youl Ryu, Bruce C. Kim:
Low-cost test technique using a new RF BIST circuit for 4.5-5.5GHz low noise amplifiers. 770-777 - H. Rodríguez-Coppola, F. García-Moliner, Joaquín Tutor-Sánchez:
Polarisability of a confined multisubband electron gas with exchange and correlation interactions. 778-785
Volume 36, Number 9, September 2005
- Daniela De Venuto, Tom Chen:
International Symposium on Quality Electronic Design. 787-788 - Huifang Qin, Yu Cao, Dejan Markovic, Andrei Vladimirescu, Jan M. Rabaey:
Standby supply voltage minimization for deep sub-micron SRAM. 789-800 - Bhaskar Chatterjee, Manoj Sachdev, Ram Krishnamurthy:
Designing leakage tolerant, low power wide-OR dominos for sub-130nm CMOS technologies. 801-809 - Daniela De Venuto:
Testing high resolution SigmaDelta ADC's by using the quantizer input as test access. 810-819 - Achintya Halder, Abhijit Chatterjee:
Test generation for specification test of analog circuits using efficient test response observation methods. 820-832 - Cristian Grecu, Partha Pratim Pande, André Ivanov, Res Saleh:
Timing analysis of network on chip architectures for MP-SoC platforms. 833-845 - Meigen Shen, Jian Liu, Li-Rong Zheng, Esa Tjukanoff, Hannu Tenhunen:
Robustness enhancement through chip-package co-design for high-speed electronics. 846-855 - Sobeeh Almukhaizim, Petros Drineas, Yiorgos Makris:
Compaction-based concurrent error detection for digital circuits. 856-862 - Volkan Kursun, Vivek De, Eby G. Friedman, Siva G. Narendra:
Monolithic voltage conversion in low-voltage CMOS technologies. 863-867
Volume 36, Number 10, October 2005
- Jesús González Gomez, Isaac Hernández-Calderón:
Preface for SLAFES XVI proceedings. 869 - F. García-Moliner:
Quasiregular heterostructures: An overview of the current situation. 870-875 - F. García-Moliner:
Why green functions for matching? 876-881 - Victor R. Velasco:
Electronic spectra of quasi-regular Fibonacci systems: Analysis of simple 1D models. 882-885 - Yuri G. Gurevich, Antonio Ortiz, Georgiy N. Logvinov, Igor N. Volovichev, Oleg Yu. Titov, J. Giraldo, A. Gutiérrez:
Transport phenomena in bipolar semiconductors: a new point of view. 886-889 - R. Baquero:
SGFM and the new FISIM states. 890-892 - Luis Salvador Froufe-Pérez, P. García-Mochales, Pedro A. Serena, P. A. Mello, J. J. Sáenz:
A Monte Carlo approach to determine conductance distributions in quasi-one-dimensional disordered wires. 893-899 - Jean-Marc Broto, B. Raquet, M. N. Baibich, M. Costes, H. Rakoto, S. Lambert, Antoine Maignan:
Electronic transport in one-dimensional Ca3Co2O6 single crystal. 900-906 - Ismardo Bonalde:
Low temperature magnetic penetration depth in d-wave superconductors. 907-912 - Gloria M. Buendía, S. J. Mitchell, Per Arne Rikvold:
Surface scaling analysis of hydrogels: From multiaffine to self-affine scaling. 913-916 - E. Corona-Organiche, E. López-Cruz, C. Vázquez-López, Juan E. Morales:
The interferometric mirage effect method: The determination of the thermal diffusivity of CdMnTe. 917-921 - Angela S. Camacho, Rafael M. Gutiérrez, Gustavo Ardila:
Intersubband transitions in quantum wells as sources of Thz radiation. 922-927 - Juan Angel Sans, Alfredo Segura, Francisco Javier Manjón, Bernabé Marí, Alfonso Muñoz, M. J. Herrera-Cabrera:
Optical properties of wurtzite and rock-salt ZnO under pressure. 928-932 - M. Giffard, N. Mercier, G. Mabon, X. Nguyen Phu, M. Sylla, P. Delhaès, Humberto Soscún, Olga Castellano, Javier Hernández, Leonardo J. Rodríguez:
Chiral salts for nonlinear optics: Prospects and achievements. 933-938
Volume 36, Number 11, November 2005
- Magnus Willander, Omer Nur, Yurii E. Lozovik, Safaa M. Al-Hilli, Z. Chiragwandi, Q.-H. Hu, Q. X. Zhao, Peter Klason:
Solid and soft nanostructured materials: Fundamentals and applications. 940-949 - Mohamed Henini, Maciej Bugajski:
Advances in self-assembled semiconductor quantum dot lasers. 950-956 - Manfred Helm, Jiaming Sun, Jaroslava Potfajova, Thomas Dekorsy, B. Schmidt, Wolfgang Skorupa:
Efficient silicon based light emitters. 957-962 - Shunfeng Li, Jörg Schörmann, Alexander Pawlis, Donat Josef As, Klaus Lischka:
Cubic InGaN/GaN multi-quantum wells and AlGaN/GaN distributed Bragg reflectors for application in resonant cavity LEDs. 963-968 - Patrick Soukiassian, Vincent Derycke, Fabrice Semond, Victor Yu. Aristov:
Atomic scale engineering of nanostructures at silicon carbide surfaces. 969-976 - Virgilio de Carvalho dos Anjos, Maria Jose Valenzuela Bell, Elder Alpes de Vasconcelos, Eronides Felisberto da Silva Júnior, Acacio A. Andrade, Roberto W. A. Franco, Maria Priscila P. Castro, Israel A. Esquef, Robert T. Faria:
Thermal-lens and photo-acoustic methods for the determination of SiC thermal properties. 977-980 - M. S. Medeiros, Ronaldo Domingues Mansano, Ana Paula Mousinho:
Photoelectric effects of nanostructured amorphous carbon films. 981-984 - Isaac Hernández-Calderón, Juan C. Salcedo-Reyes, Adrián Alfaro-Martínez, Miguel García-Rocha:
Fine tuning of the emission of ultra-thin quantum wells of CdSe and CdTe by modification of the growth temperature. 985-988 - Frederico D. Menezes, A. G. Brasil, W. L. Moreira, L. C. Barbosa, C. L. Cesar, R. de C. Ferreira, P. M. A. de Farias, B. S. Santos:
CdTe/CdS core shell quantum dots for photonic applications. 989-991 - Walter M. de Azevedo, Eronides Felisberto da Silva Júnior, Elder A. de Vasconcelos, Henri Boudinov:
Visible photoluminescence from Ge nanoclusters implanted in nanoporous aluminum oxide films. 992-994 - F. M. Nodari, Marlus Koehler, Marcos G. E. da Luz, Lucimara S. Roman:
Electrical aspects of photovoltaic devices based on bi-layer organic semiconducting materials. 995-997 - J. S. Soares, H. W. Leite Alves:
Ab initio calculation of the structural and electronic properties of the SiC (100) Surfaces. 998-1001 - S. C. P. Rodrigues Jr., M. N. d'Eurydice, Guilherme Matos Sipahi, Eronides Felisberto da Silva Júnior:
Design of InGaN/AlInGaN superlattices for white-light device applications. 1002-1005 - F. F. de Medeiros, Eudenílson L. Albuquerque, M. S. Vasconcelos:
Exciton-polaritons in nanostructured nitride superlattices. 1006-1010 - J. B. da Silva Jr., Elder A. de Vasconcelos, B. E. C. A. dos Santos, José Alexander de King Freire, V. N. Freire, Gil de Aquino Farias, Eronides Felisberto da Silva Júnior:
Statistical analysis of topographic images of nanoporous silicon and model surfaces. 1011-1015 - Fábio Menezes de Souza Lima, A. B. Veloso, A. L. A. Fonseca, O. A. C. Nunes Jr., Eronides Felisberto da Silva Júnior:
Variational results for electron mobility in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. 1016-1019 - Viola Lemos, Silvete Guerini, S. M. Lala, L. A. Montoro, José Mauricio Rosolen:
Li-inserted carbon nanotube Raman scattering. 1020-1022 - Ricardo C. Goncalves da Silva, Henri Boudinov, R. R. B. Correia:
Design and development of two-dimensional position sensitive photo-detector. 1023-1025 - J. S. Soares, H. W. Leite Alves:
Ab initio calculation of the SiC (100) surfaces phonon dispersion. 1026-1028 - M. N. d'Eurydice, Guilherme Matos Sipahi, S. C. P. Rodrigues Jr., Eronides Felisberto da Silva Júnior:
Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells. 1029-1033 - A. M. Alcalde, O. O. Diniz Neto, G. E. Marques:
Spin-flip relaxation due to phonon macroscopic deformation potential in quantum dots. 1034-1037 - Ihosvany Camps, A. Vercik, Yara Galvão Gobato, Maria José Santos Pompeu Brasil, Gilmar Eugênio Marques, S. S. Makler:
Negative charged excitons in double barrier diodes. 1038-1040 - E. Souto, O. A. C. Nunes Jr., D. A. Agrello, A. L. A. Fonseca, Eronides Felisberto da Silva Júnior:
Magneto-quantum oscillations of the Korringa relaxation rate of manganese ion near a two-dimensional electron gas. 1041-1044 - A. P. Castro, H. W. Leite Alves:
Ab initio study of the nitridation of the GaAs (100) surfaces. 1045-1048 - C. L. N. Oliveira, Andrey Chaves, E. W. S. Caetano, M. H. Degani, José Alexander de King Freire:
Quantum confinement of carriers in heterostructured GaAs/GaP quantum wires. 1049-1051 - V. M. Apel, E. V. Anda, Maria A. Davidovich:
Electronic properties of interacting quantum dots. 1052-1054 - Patricia Lopes Barros de Araújo, Elmo Silvano de Araújo, R. F. S. Santos, Ana Paula Lima Pacheco:
Synthesis and morphological characterization of PMMA/polyaniline nanofiber composites. 1055-1057 - S. K. Medeiros, Eudenílson L. Albuquerque, F. F. Maia, E. W. S. Caetano, Gil de Aquino Farias, V. N. Freire, B. S. Cavada, M. L. Pessati, T. L. P. Pessati:
Structural and optical properties of CaO. 1058-1061
Volume 36, Number 12, December 2005
- Bozena Kaminska, Stephen K. Sunter, Salvador Mir:
Analog and mixed signal test techniques for SOC development. 1063 - Román Mozuelos, Yolanda Lechuga, Mar Martínez, Salvador Bracho:
Test of a switched-capacitor ADC by a built-in charge sensor. 1064-1072 - Eduardo Romero, Gabriela Peretti, Gloria Huertas, Diego Vázquez:
Test of switched-capacitor ladder filters using OBT. 1073-1079 - Guillaume Prenat, Salvador Mir, Diego Vázquez, Luís Rolíndez:
A low-cost digital frequency testing approach for mixed-signal devices using SigmaDelta modulation. 1080-1090 - Anand Gopalan, Martin Margala, P. R. Mukund:
A current based self-test methodology for RF front-end circuits. 1091-1102 - Hans G. Kerkhoff:
The test search for true mixed-signal cores. 1103-1111 - Antonio Andrade Jr., Gustavo Vieira, Tiago R. Balen, Marcelo Lubaszewski, Florence Azaïs, Michel Renovell:
Built-in self-test of global interconnects of field programmable analog arrays. 1112-1123
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