"Modeling threshold voltage and drain-induced barrier lowering effect of ..."

Lijun Xu et al. (2023)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2023.105830

access: closed

type: Journal Article

metadata version: 2023-09-24

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/XuWLC23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/XuWLC23
Lijun Xu, Guitai Wu, Pei Li, Tiedong Cheng:
Modeling threshold voltage and drain-induced barrier lowering effect of opposite doping core-shell channel surrounding-gate junctionless MOSFET. Microelectron. J. 139: 105830 (2023)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.