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"Single event upset rate modeling for ultra-deep submicron complementary ..."

Liang He et al. (2016)

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DOI: 10.1007/S11432-015-5362-2

access: closed

type: Journal Article

metadata version: 2022-06-02

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Liang He, Hua Chen, Peng Sun, Xiaofei Jia, Chongguang Dai, Jing Liu, Long Shao, Zhaoqing Liu:
Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices. Sci. China Inf. Sci. 59(4): 042402:1-042402:11 (2016)

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