"QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window ..."

Sunghyun Yoon et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185294

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

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Sunghyun Yoon, Sung-In Hong, Daehyun Kim, Garam Choi, Young Mo Kim, Kyunghoon Min, Seiyon Kim, Myung-Hee Na, Seonyong Cha:
QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering. VLSI Technology and Circuits 2023: 1-2

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