"Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by ..."

Jangseop Lee et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830179

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type: Conference or Workshop Paper

metadata version: 2022-08-04

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Jangseop Lee, Seonghun Kim, Sangmin Lee, Sanghyun Ban, Seongjae Heo, Donghwa Lee, Oleksandr Mosendz, Hyunsang Hwang:
Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 10¹¹) and Low Drift Characteristics. VLSI Technology and Circuits 2022: 320-321

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