"A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for ..."

Seki Kim et al. (2022)

> Home

Details and statistics

DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830252

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-08

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/vlsit/KimLLLLJKNKKNPL22
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/vlsit/KimLLLLJKNKKNPL22
Seki Kim, Hyongmin Lee, Yongjin Lee, Dongha Lee, Byeongbae Lee, Jahoon Jin, Susie Kim, Miri Noh, Kwonwoo Kang, Sangho Kim, Takahiro Nomiyama, Ji-Seon Paek, Jongwoo Lee:
A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications. VLSI Technology and Circuits 2022: 190-191

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.