BibTeX record conf/nvmts/LiSHQBJKLLWZCWZ24

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@inproceedings{DBLP:conf/nvmts/LiSHQBJKLLWZCWZ24,
  author       = {J. H. Li and
                  S. F. Sun and
                  W. L. Huang and
                  Q. L. Qu and
                  J. Y. Bail and
                  H. Jin and
                  W. Kang and
                  X. Li and
                  H. X. Liu and
                  G. F. Wang and
                  D. M. Zhang and
                  K. H. Cao and
                  Z. H. Wang and
                  H. Zhang and
                  W. S. Zhao},
  title        = {High Resistance and Low Variation 8Kb {SOT-MRAM} Compute-in-Memory
                  Array Based on 1T-1R Cell Structure},
  booktitle    = {22nd Non-Volatile Memory Technology Symposium, {NVMTS} 2024, Busan,
                  Republic of Korea, October 20-23, 2024},
  pages        = {1--4},
  publisher    = {{IEEE}},
  year         = {2024},
  url          = {https://doi.org/10.1109/IEEECONF63530.2024.10830849},
  doi          = {10.1109/IEEECONF63530.2024.10830849},
  timestamp    = {Thu, 30 Jan 2025 16:23:16 +0100},
  biburl       = {https://dblp.org/rec/conf/nvmts/LiSHQBJKLLWZCWZ24.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}