default search action
"PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 ..."
Yun Li et al. (2018)
- Yun Li, K. L. Wang, Shaoyan Di, Peng Huang, Gang Du, Xiao-Yan Liu:
PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics. IRPS 2018: 7-1
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.