Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory. - Lin, Z.; Zhang, Z.; Niu, C.; Dou, H.; Xu, K.; Islam, M.; Lin, J.-Y.; Sung, C.; Hong, M.; Ha, Daewon; Wang, H.; Alam, M. A.; et al. (2024)

Electrical measurements of voltage stressed Al2O3/GaAs MOSFET. - Tang, Z.; Ye, P. D.; Lee, D.; Wie, Chu-Ryang (Microelectron. Reliab., 2007)