Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory - Z. Lin; Z. Zhang; C. Niu; H. Dou; K. Xu; M. Islam; J.-Y. Lin; C. Sung; M. Hong; Daewon Ha; H. Wang; M. A. Alam; et al. (IEEE Symposium on VLSI Technology and Circuits 2024, Honolulu, HI, USA, June 16-20, 2024, 2024)

Electrical measurements of voltage stressed Al\(_2\)O\(_3\)/GaAs MOSFET - Z. Tang; P. D. Ye; D. Lee; Chu-Ryang Wie (Microelectron. Reliab., 2007)