PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors. - Joy, Soumitra; Joshi, Kaustubh; Zubair, Ahmad; Bader, Samuel; Peck, Jason; Beumer, Michael; Koirala, Pratik; Radosavljevic, Marko; Vora, Heli; Meric, Inanc; Then, Han Wui (2024)

Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS Technology. - Jamil, M.; Mukhopadhay, S.; Ghoneim, M.; Shailos, A.; Prasad, Chetan; Meric, Inanc; Ramey, Stephen (2023)

A detailed comparison of various off-state breakdown methodologies for scaled Tri-gate technologies. - Joshi, K.; Nminibapiel, D.; Ghoneim, M.; Ali, D.; Ramamurthy, R.; Pantisano, L.; Meric, Inanc; Ramey, Stephen (2023)

Localized thermal effects in Gate-all-around devices. - Landon, Colin; Jiang, Lei; Pantuso, Daniel; Meric, Inanc; Komeyli, Kam; Hicks, Jeffrey; Schroeder, Daniel (2023)

A Unified Aging Model Framework Capturing Device to Circuit Degradation for Advance Technology Nodes. - Mukhopadhyay, S.; Chen, C.; Jamil, M.; Standfest, Jihan; Meric, Inanc; Gill, Balkaran; Ramey, Stephen (2023)

Novel Cell Architectures with Back-side Transistor Contacts for Scaling and Performance. - Kobrinsky, Mauro J.; Silva, J. D.; Mannebach, E.; Mills, S.; Qader, M. Abd El; Adebayo, O.; Radhakrishna, N. Arkali; Beasley, M.; Chawla, J.; Chugh, S.; Dasgupta, A.; Desai, U.; et al. (2023)

Method to evaluate off-state breakdown in scaled Tri-gate technologies. - Nminibapiel, D.; Joshi, K.; Ramamurthy, R.; Pantisano, L.; Meric, Inanc; Ramey, Stephen (2022)

Machine Learning On Transistor Aging Data: Test Time Reduction and Modeling for Novel Devices. - Chatterjee, Neel; Ortega, John; Meric, Inanc; Xiao, Peng; Tsameret, Ilan (2021)

Modeling Framework for Transistor Aging Playback in Advanced Technology Nodes. - Meric, Inanc; Ramey, Stephen; Novak, Steven R.; Gupta, S.; Mudanai, S. P.; Hicks, Jeffrey (2020)

Novel Re-configurable Circuits For Aging Characterization: Connecting Devices to Circuits. - Sutaria, Ketul B.; Standfest, Jihan; Meric, Inanc; Davoody, Amirhossein H.; Namalapuri, Swaroop Kumar; Mutyala, Trinadh; P., Supriya; Gill, Balkaran; Ramey, Stephen; Hicks, Jeffery (2020)

Transistor reliability characterization and modeling of the 22FFL FinFET technology. - Su, Chen-Yi; Armstrong, M.; Jiang, Lei; Kumar, S. A.; Landon, C. D.; Liu, S.; Meric, Inanc; Park, K. W.; Paulson, Leif; Phoa, K.; Sell, Bernhard; Standfest, Jihan; et al. (2018)

Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics. - Meric, Inanc; Dean, Cory R.; Petrone, Nicholas; Wang, Lei; Hone, James C.; Kim, Philip; Shepard, Kenneth L. (Proc. IEEE, 2013)

Characterization and modeling of graphene field-effect devices. - Shepard, Kenneth L.; Meric, Inanc; Kim, Philip (2008)