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ORCIDBibTeX records: Daniel M. Fleetwood
@inproceedings{DBLP:conf/irps/NerguiHMLSLZFC24,
author = {Delgermaa Nergui and
Mozhgan Hosseinzadeh and
Y. A. Mensah and
Harrison P. Lee and
D. G. Sam and
K. Li and
E. X. Zhang and
Daniel M. Fleetwood and
John D. Cressler},
title = {The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress
and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs},
booktitle = {{IEEE} International Reliability Physics Symposium, {IRPS} 2024, Grapevine,
TX, USA, April 14-18, 2024},
pages = {1--5},
publisher = {{IEEE}},
year = {2024},
url = {https://doi.org/10.1109/IRPS48228.2024.10529309},
doi = {10.1109/IRPS48228.2024.10529309},
timestamp = {Thu, 28 Nov 2024 00:00:00 +0100},
biburl = {https://dblp.org/rec/conf/irps/NerguiHMLSLZFC24.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/irps/ZhangTGASF24,
author = {En{-}xia Zhang and
Shintaro Toguchi and
Zi Xiang Guo and
Michael L. Alles and
Ronald D. Schrimpf and
Daniel M. Fleetwood},
title = {Charge Trapping in Irradiated 3D Devices and ICs (Invited)},
booktitle = {{IEEE} International Reliability Physics Symposium, {IRPS} 2024, Grapevine,
TX, USA, April 14-18, 2024},
pages = {10},
publisher = {{IEEE}},
year = {2024},
url = {https://doi.org/10.1109/IRPS48228.2024.10529460},
doi = {10.1109/IRPS48228.2024.10529460},
timestamp = {Thu, 12 Dec 2024 00:00:00 +0100},
biburl = {https://dblp.org/rec/conf/irps/ZhangTGASF24.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/drc/Fleetwood23,
author = {Daniel M. Fleetwood},
title = {Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes},
booktitle = {Device Research Conference, {DRC} 2023, Santa Barbara, CA, USA, June
25-28, 2023},
pages = {1--2},
publisher = {{IEEE}},
year = {2023},
url = {https://doi.org/10.1109/DRC58590.2023.10186943},
doi = {10.1109/DRC58590.2023.10186943},
timestamp = {Tue, 08 Aug 2023 12:06:53 +0200},
biburl = {https://dblp.org/rec/conf/drc/Fleetwood23.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/drc/IslamSSZBFSFBHS23,
author = {Sajal Islam and
Aditha S. Senarath and
Arijit Sengupta and
En{-}xia Zhang and
Dennis R. Ball and
Daniel M. Fleetwood and
Ronald D. Schrimpf and
Esmat Farzana and
Arkka Bhattacharyya and
Nolan S. Hendricks and
James S. Speck},
title = {Single-Event Burnout by Cf-252 Irradiation in Vertical {\textdollar}{\textbackslash}beta{\textdollar}-Ga2O3
Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric
Field Plate},
booktitle = {Device Research Conference, {DRC} 2023, Santa Barbara, CA, USA, June
25-28, 2023},
pages = {1--2},
publisher = {{IEEE}},
year = {2023},
url = {https://doi.org/10.1109/DRC58590.2023.10187004},
doi = {10.1109/DRC58590.2023.10187004},
timestamp = {Sun, 06 Oct 2024 01:00:00 +0200},
biburl = {https://dblp.org/rec/conf/drc/IslamSSZBFSFBHS23.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/asicon/WangZFWMLADAS21,
author = {Peng Wang and
En{-}xia Zhang and
Daniel M. Fleetwood and
Peng Fei Wang and
Michael W. McCurdy and
Ji{-}Tzouh Lin and
Michael L. Alles and
Jim L. Davidson and
Bruce W. Alphenaar and
Ronald D. Schrimpf},
editor = {Fan Ye and
Ting{-}Ao Tang},
title = {Effects of Charge Generation and Trapping on the X-ray Response of
Strained AlGaN/GaN HEMTs},
booktitle = {14th {IEEE} International Conference on ASIC, {ASICON} 2021, Kunming,
China, October 26-29, 2021},
pages = {1--4},
publisher = {{IEEE}},
year = {2021},
url = {https://doi.org/10.1109/ASICON52560.2021.9620350},
doi = {10.1109/ASICON52560.2021.9620350},
timestamp = {Tue, 24 Dec 2024 00:00:00 +0100},
biburl = {https://dblp.org/rec/conf/asicon/WangZFWMLADAS21.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/irps/Fleetwood19,
author = {Daniel M. Fleetwood},
title = {Reliability Limiting Defects in {MOS} Gate Oxides: Mechanisms and
Modeling Implications},
booktitle = {{IEEE} International Reliability Physics Symposium, {IRPS} 2019, Monterey,
CA, USA, March 31 - April 4, 2019},
pages = {1--10},
publisher = {{IEEE}},
year = {2019},
url = {https://doi.org/10.1109/IRPS.2019.8720427},
doi = {10.1109/IRPS.2019.8720427},
timestamp = {Wed, 16 Oct 2019 14:14:55 +0200},
biburl = {https://dblp.org/rec/conf/irps/Fleetwood19.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/Fleetwood18,
author = {Daniel M. Fleetwood},
title = {Border traps and bias-temperature instabilities in {MOS} devices},
journal = {Microelectron. Reliab.},
volume = {80},
pages = {266--277},
year = {2018},
url = {https://doi.org/10.1016/j.microrel.2017.11.007},
doi = {10.1016/J.MICROREL.2017.11.007},
timestamp = {Sat, 22 Feb 2020 00:00:00 +0100},
biburl = {https://dblp.org/rec/journals/mr/Fleetwood18.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/YangLLF18,
author = {Jianqun Yang and
Xingji Li and
Chaoming Liu and
Daniel M. Fleetwood},
title = {The effect of ionization and displacement damage on minority carrier
lifetime},
journal = {Microelectron. Reliab.},
volume = {82},
pages = {124--129},
year = {2018},
url = {https://doi.org/10.1016/j.microrel.2018.01.012},
doi = {10.1016/J.MICROREL.2018.01.012},
timestamp = {Sat, 22 Feb 2020 00:00:00 +0100},
biburl = {https://dblp.org/rec/journals/mr/YangLLF18.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/irps/SasikumarZKZFSS15,
author = {A. Sasikumar and
Z. Zhang and
P. Kumar and
En{-}xia Zhang and
Daniel M. Fleetwood and
Ronald D. Schrimpf and
Paul Saunier and
Cathy Lee and
S. A. Ringel and
Aaron R. Arehart},
title = {Proton irradiation-induced traps causing {VT} instabilities and {RF}
degradation in GaN HEMTs},
booktitle = {{IEEE} International Reliability Physics Symposium, {IRPS} 2015, Monterey,
CA, USA, April 19-23, 2015},
pages = {2},
publisher = {{IEEE}},
year = {2015},
url = {https://doi.org/10.1109/IRPS.2015.7112688},
doi = {10.1109/IRPS.2015.7112688},
timestamp = {Fri, 29 Nov 2024 00:00:00 +0100},
biburl = {https://dblp.org/rec/conf/irps/SasikumarZKZFSS15.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/ZhangZFASRG14,
author = {Cher Xuan Zhang and
En{-}xia Zhang and
Daniel M. Fleetwood and
Michael L. Alles and
Ronald D. Schrimpf and
Chris Rutherglen and
Kosmas Galatsis},
title = {Total-ionizing-dose effects and reliability of carbon nanotube {FET}
devices},
journal = {Microelectron. Reliab.},
volume = {54},
number = {11},
pages = {2355--2359},
year = {2014},
url = {https://doi.org/10.1016/j.microrel.2014.05.011},
doi = {10.1016/J.MICROREL.2014.05.011},
timestamp = {Sun, 06 Oct 2024 01:00:00 +0200},
biburl = {https://dblp.org/rec/journals/mr/ZhangZFASRG14.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/RezzakMSAFL12,
author = {Nadia Rezzak and
Pierre Maillard and
Ronald D. Schrimpf and
Michael L. Alles and
Daniel M. Fleetwood and
Yanfeng Albert Li},
title = {The impact of device width on the variability of post-irradiation
leakage currents in 90 and 65 nm {CMOS} technologies},
journal = {Microelectron. Reliab.},
volume = {52},
number = {11},
pages = {2521--2526},
year = {2012},
url = {https://doi.org/10.1016/j.microrel.2012.05.013},
doi = {10.1016/J.MICROREL.2012.05.013},
timestamp = {Sat, 22 Feb 2020 00:00:00 +0100},
biburl = {https://dblp.org/rec/journals/mr/RezzakMSAFL12.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/RoyPZDFFSMSP11,
author = {Tania Roy and
Yevgeniy S. Puzyrev and
En{-}xia Zhang and
Sandeepan DasGupta and
Sarah A. Francis and
Daniel M. Fleetwood and
Ronald D. Schrimpf and
Umesh K. Mishra and
Jim S. Speck and
Sokrates T. Pantelides},
title = {1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH\({}_{\mbox{3}}\)-rich
conditions},
journal = {Microelectron. Reliab.},
volume = {51},
number = {2},
pages = {212--216},
year = {2011},
url = {https://doi.org/10.1016/j.microrel.2010.09.022},
doi = {10.1016/J.MICROREL.2010.09.022},
timestamp = {Sun, 06 Oct 2024 01:00:00 +0200},
biburl = {https://dblp.org/rec/journals/mr/RoyPZDFFSMSP11.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/ArineroZRSFCHMTS11,
author = {R. Arinero and
En{-}xia Zhang and
Nadia Rezzak and
Ronald D. Schrimpf and
Daniel M. Fleetwood and
B. K. Cho{\"{\i}} and
A. B. Hmelo and
Julien Mekki and
Antoine D. Touboul and
Fr{\'{e}}d{\'{e}}ric Saign{\'{e}}},
title = {High fluence 1.8 MeV proton irradiation effects on n-type {MOS} capacitors},
journal = {Microelectron. Reliab.},
volume = {51},
number = {12},
pages = {2093--2096},
year = {2011},
url = {https://doi.org/10.1016/j.microrel.2011.05.019},
doi = {10.1016/J.MICROREL.2011.05.019},
timestamp = {Sun, 06 Oct 2024 01:00:00 +0200},
biburl = {https://dblp.org/rec/journals/mr/ArineroZRSFCHMTS11.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/esscirc/PantelidesTBRHB09,
author = {Sokrates T. Pantelides and
L. Tsetseris and
M. J. Beck and
Sergey N. Rashkeev and
G. Hadjisavvas and
I. G. Batyrev and
B. R. Tuttle and
A. G. Marinopoulos and
X. J. Zhou and
Daniel M. Fleetwood and
Ronald D. Schrimpf},
title = {Performance, reliability, radiation effects, and aging issues in microelectronics
- from atomic-scale physics to engineering-level modeling},
booktitle = {35th European Solid-State Circuits Conference, {ESSCIRC} 2009, Athens,
Greece, 14-18 September 2009},
pages = {76--83},
publisher = {{IEEE}},
year = {2009},
url = {https://doi.org/10.1109/ESSCIRC.2009.5325931},
doi = {10.1109/ESSCIRC.2009.5325931},
timestamp = {Tue, 26 Mar 2024 00:00:00 +0100},
biburl = {https://dblp.org/rec/conf/esscirc/PantelidesTBRHB09.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/FaccioBCFGMS08,
author = {Federico Faccio and
Hugh J. Barnaby and
Xiao J. Chen and
Daniel M. Fleetwood and
Laura Gonella and
Michael L. McLain and
Ronald D. Schrimpf},
title = {Total ionizing dose effects in shallow trench isolation oxides},
journal = {Microelectron. Reliab.},
volume = {48},
number = {7},
pages = {1000--1007},
year = {2008},
url = {https://doi.org/10.1016/j.microrel.2008.04.004},
doi = {10.1016/J.MICROREL.2008.04.004},
timestamp = {Sun, 02 Oct 2022 01:00:00 +0200},
biburl = {https://dblp.org/rec/journals/mr/FaccioBCFGMS08.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/PantelidesTRZFS07,
author = {Sokrates T. Pantelides and
L. Tsetseris and
Sergey N. Rashkeev and
X. J. Zhou and
Daniel M. Fleetwood and
Ronald D. Schrimpf},
title = {Hydrogen in MOSFETs - {A} primary agent of reliability issues},
journal = {Microelectron. Reliab.},
volume = {47},
number = {6},
pages = {903--911},
year = {2007},
url = {https://doi.org/10.1016/j.microrel.2006.10.011},
doi = {10.1016/J.MICROREL.2006.10.011},
timestamp = {Tue, 26 Mar 2024 00:00:00 +0100},
biburl = {https://dblp.org/rec/journals/mr/PantelidesTRZFS07.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/FleetwoodRTZBWSP07,
author = {Daniel M. Fleetwood and
M. P. Rodgers and
L. Tsetseris and
X. J. Zhou and
I. Batyrev and
S. Wang and
Ronald D. Schrimpf and
Sokrates T. Pantelides},
title = {Effects of device aging on microelectronics radiation response and
reliability},
journal = {Microelectron. Reliab.},
volume = {47},
number = {7},
pages = {1075--1085},
year = {2007},
url = {https://doi.org/10.1016/j.microrel.2006.06.009},
doi = {10.1016/J.MICROREL.2006.06.009},
timestamp = {Sat, 22 Feb 2020 00:00:00 +0100},
biburl = {https://dblp.org/rec/journals/mr/FleetwoodRTZBWSP07.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/FelixSFSG04,
author = {J. A. Felix and
J. R. Schwank and
Daniel M. Fleetwood and
M. R. Shaneyfelt and
Evgeni P. Gusev},
title = {Effects of radiation and charge trapping on the reliability of high-kappa
gate dielectrics},
journal = {Microelectron. Reliab.},
volume = {44},
number = {4},
pages = {563--575},
year = {2004},
url = {https://doi.org/10.1016/j.microrel.2003.12.005},
doi = {10.1016/J.MICROREL.2003.12.005},
timestamp = {Sat, 22 Feb 2020 00:00:00 +0100},
biburl = {https://dblp.org/rec/journals/mr/FelixSFSG04.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/Fleetwood02,
author = {Daniel M. Fleetwood},
title = {Effects of hydrogen transport and reactions on microelectronics radiation
response and reliability},
journal = {Microelectron. Reliab.},
volume = {42},
number = {4-5},
pages = {523--541},
year = {2002},
url = {https://doi.org/10.1016/S0026-2714(02)00019-7},
doi = {10.1016/S0026-2714(02)00019-7},
timestamp = {Sat, 22 Feb 2020 00:00:00 +0100},
biburl = {https://dblp.org/rec/journals/mr/Fleetwood02.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/Fleetwood02a,
author = {Daniel M. Fleetwood},
title = {Hydrogen-related reliability issues for advanced microelectronics},
journal = {Microelectron. Reliab.},
volume = {42},
number = {9-11},
pages = {1397--1403},
year = {2002},
url = {https://doi.org/10.1016/S0026-2714(02)00158-0},
doi = {10.1016/S0026-2714(02)00158-0},
timestamp = {Sat, 22 Feb 2020 00:00:00 +0100},
biburl = {https://dblp.org/rec/journals/mr/Fleetwood02a.bib},
bibsource = {dblp computer science bibliography, https://dblp.org}
}
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