Charge Trapping in Irradiated 3D Devices and ICs (Invited) - En-xia Zhang; Shintaro Toguchi; Zi Xiang Guo; Michael L. Alles; Ronald D. Schrimpf; Daniel M. Fleetwood (IEEE International Reliability Physics Symposium, IRPS 2024, Grapevine, TX, USA, April 14-18, 2024, 2024)

Single-Event Burnout by Cf-252 Irradiation in Vertical \beta-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate - Sajal Islam; Aditha S. Senarath; Arijit Sengupta; En-xia Zhang; Dennis R. Ball; Daniel M. Fleetwood; Ronald D. Schrimpf; Esmat Farzana; Arkka Bhattacharyya; Nolan S. Hendricks; James S. Speck (Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023, 2023)

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs - Peng Wang; En-xia Zhang; Daniel M. Fleetwood; Peng Fei Wang; Michael W. McCurdy; Ji-Tzouh Lin; Michael L. Alles; Jim L. Davidson; Bruce W. Alphenaar; Ronald D. Schrimpf (14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021, 2021)

A TCAD evaluation of a single Bulk-BICS with integrative memory cell - Alexandre Simionovski; Gilson I. Wirth; Ronald D. Schrimpf; Bharat L. Bhuva (Microelectron. J., 2018)

Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs - Balaji Narasimham; Jung K. Wang; Narayana Vedula; Saket Gupta; Brandon Bartz; Carl Monzel; Indranil Chatterjee; Bharat L. Bhuva; Ronald D. Schrimpf; Robert A. Reed (IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015, 2015)

Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs - A. Sasikumar; Z. Zhang; P. Kumar; En-xia Zhang; Daniel M. Fleetwood; Ronald D. Schrimpf; Paul Saunier; Cathy Lee; S. A. Ringel; Aaron R. Arehart (IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015, 2015)

Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs - Aditya Kalavagunta; Shubhajit Mukherjee; Robert A. Reed; Ronald D. Schrimpf (Microelectron. Reliab., 2014)

Total-ionizing-dose effects and reliability of carbon nanotube FET devices - Cher Xuan Zhang; En-xia Zhang; Daniel M. Fleetwood; Michael L. Alles; Ronald D. Schrimpf; Chris Rutherglen; Kosmas Galatsis (Microelectron. Reliab., 2014)

An efficient technique to select logic nodes for single event transient pulse-width reduction - Nihaar N. Mahatme; Indranil Chatterjee; Akash Patki; Daniel B. Limbrick; Bharat L. Bhuva; Ronald D. Schrimpf; William H. Robinson (Microelectron. Reliab., 2013)

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies - Nadia Rezzak; Pierre Maillard; Ronald D. Schrimpf; Michael L. Alles; Daniel M. Fleetwood; Yanfeng Albert Li (Microelectron. Reliab., 2012)

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH\(_3\)-rich conditions - Tania Roy; Yevgeniy S. Puzyrev; En-xia Zhang; Sandeepan DasGupta; Sarah A. Francis; Daniel M. Fleetwood; Ronald D. Schrimpf; Umesh K. Mishra; Jim S. Speck; Sokrates T. Pantelides (Microelectron. Reliab., 2011)

The sensitivity of radiation-induced leakage to STI topology and sidewall doping - Nadia Rezzak; Michael L. Alles; Ronald D. Schrimpf; Sarah Kalemeris; Lloyd W. Massengill; John Sochacki; Hugh J. Barnaby (Microelectron. Reliab., 2011)

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors - R. Arinero; En-xia Zhang; Nadia Rezzak; Ronald D. Schrimpf; Daniel M. Fleetwood; B. K. Choï; A. B. Hmelo; Julien Mekki; Antoine D. Touboul; Frédéric Saigné (Microelectron. Reliab., 2011)

Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling - Sokrates T. Pantelides; L. Tsetseris; M. J. Beck; Sergey N. Rashkeev; G. Hadjisavvas; I. G. Batyrev; B. R. Tuttle; A. G. Marinopoulos; X. J. Zhou; Daniel M. Fleetwood; Ronald D. Schrimpf (35th European Solid-State Circuits Conference, ESSCIRC 2009, Athens, Greece, 14-18 September 2009, 2009)

Total ionizing dose effects in shallow trench isolation oxides - Federico Faccio; Hugh J. Barnaby; Xiao J. Chen; Daniel M. Fleetwood; Laura Gonella; Michael L. McLain; Ronald D. Schrimpf (Microelectron. Reliab., 2008)

Hydrogen in MOSFETs - A primary agent of reliability issues - Sokrates T. Pantelides; L. Tsetseris; Sergey N. Rashkeev; X. J. Zhou; Daniel M. Fleetwood; Ronald D. Schrimpf (Microelectron. Reliab., 2007)

Effects of device aging on microelectronics radiation response and reliability - Daniel M. Fleetwood; M. P. Rodgers; L. Tsetseris; X. J. Zhou; I. Batyrev; S. Wang; Ronald D. Schrimpf; Sokrates T. Pantelides (Microelectron. Reliab., 2007)

Single event burnout in power diodes: Mechanisms and models - A. M. Albadri; Ronald D. Schrimpf; Kenneth F. Galloway; D. Greg Walker (Microelectron. Reliab., 2006)

Single event transient effects in a voltage reference - P. C. Adell; Ronald D. Schrimpf; C. R. Cirba; W. T. Holman; X. Zhu; Hugh J. Barnaby; O. Mion (Microelectron. Reliab., 2005)

A generalized model for the lifetime of microelectronic components, applied to storage conditions - Loren J. Wise; Ronald D. Schrimpf; Harold G. Parks; Kenneth F. Galloway (Microelectron. Reliab., 2001)

Thermal modeling of single event burnout failure in semiconductor power devices - D. Greg Walker; T. S. Fisher; J. Liu; Ronald D. Schrimpf (Microelectron. Reliab., 2001)