H. J. Kim

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with J. H. Lee

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Publications

2024
[c17]
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J.-H. Yoo, Y.-S. Jeon, S.-W. Son, I.-G. Lee, H.-B. Jo, S.-M. Choi, M.-S. Yu, W.-S. Park, H.-J. Kim, H.-J. Lee, S.-P. Son, S. K. Kim, J. Yun, J.-P. Shim, H. Jang, K. Lee, Y. Jeong, T. Kim, C.-S. Shin, T.-W. Kim, J.-H. Lee, K.-S. Seo, K. Yang, D.-H. Kim:
Single-Power-Supply Compatible Cryogenic In0.8Ga0.2As Quantum-well HEMTs with Record Combination of high-frequency and low-noise performance for quantum-computins applications. VLSI Technology and Circuits 2024: 1-2
2023
[c16]
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  - conf/vlsit/HanPJLKKSPSPLLK23
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Jung-Won Han, S. H. Park, Moonyoung Jeong, K. N. Kim, H. J. Kim, J. C. Shin, S. M. Park, S. H. Shin, S. W. Park, K. S. Lee, J. H. Lee, S. H. Kim, B. C. Kim, Myoung H. Jung, I. Y. Yoon, H. Kim, S. U. Jang, K. J. Park, Y. K. Kim, I. G. Kim, J. H. Oh, S. Y. Han, B. S. Kim, Bong Jin Kuh, J. M. Park:
Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -. VLSI Technology and Circuits 2023: 1-2
[c15]
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J.-H. Yoo, H.-B. Jo, I.-G. Lee, S.-M. Choi, J.-M. Baek, S. T. Lee, H. Jang, M. W. Kong, H. H. Kim, H. J. Lee, H.-J. Kim, H.-S. Jeong, W.-S. Park, D.-H. Ko, S. H. Shin, H.-M. Kwon, S. K. Kim, J. G. Kim, J. Yun, T. Kim, K.-Y. Shin, T.-W. Kim, J.-K. Shin, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim:
Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling. VLSI Technology and Circuits 2023: 1-2
2022
[c14]
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  - conf/vlsit/JoLBLCKJPYLYSKK22
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H.-B. Jo, I.-G. Lee, J.-M. Baek, S. T. Lee, S.-M. Choi, H.-J. Kim, H.-S. Jeong, W.-S. Park, J.-H. Yoo, H.-Y. Lee, D. Y. Yun, S.-W. Son, D.-H. Ko, Tae-Woo Kim, H.-M. Kwon, S.-K. Kim, Jun-Gyu Kim, J. Yun, T. Kim, J. H. Lee, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim:
Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets. VLSI Technology and Circuits 2022: 397-398

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