A 159mm\(^2\) 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface - Hyunggon Kim; Jung-Hoon Park; Ki-Tae Park; Pansuk Kwak; Ohsuk Kwon; Chulbum Kim; Younyeol Lee; Sangsoo Park; Kyungmin Kim; Doohyun Cho; Juseok Lee; Jungho Song; et al. (IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010, 2010)