Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited). - Vandendaele, William; Leurquin, Camille; Lavieville, R.; Jaud, Marie-Anne; Viey, Abygaël; Gwoziecki, Romain; Mohamad, B.; Nowak, Etienne; Constant, Aurore; Iucolano, Ferdinando (2023)

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. - Rrustemi, B.; Viey, Aby-Gaël; Jaud, Marie-Anne; Triozon, François; Vandendaele, William; Leroux, Charles; Cluzel, Jacques; Martin, S.; Royer, Cyrille Le; Gwoziecki, Romain; Modica, Roberto; Iucolano, Ferdinando; et al. (2021)

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. - Viey, Aby-Gaël; Vandendaele, William; Jaud, Marie-Anne; Coignus, Jean; Cluzel, Jacques; Krakovinsky, Alexis; Martin, Simon; Biscarrat, Jérome; Gwoziecki, Romain; Sousa, Veronique; Gaillard, Fred; Modica, Roberto; et al. (2021)

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. - Viey, Aby-Gaël; Vandendaele, William; Jaud, Marie-Anne; Gwoziecki, Romain; Torres, A.; Plissonnier, Marc; Gaillard, Fred; Ghibaudo, Gérard; Modica, Roberto; Iucolano, Ferdinando; Meneghini, Matteo; Meneghesso, Gaudenzio (2019)

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. - Vandendaele, William; Garros, Xavier; Lorin, Thomas; Morvan, Erwan; Torres, A.; Escoffier, René; Jaud, Marie-Anne; Plissonnier, Marc; Gaillard, Fred (2018)

On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. - Vandendaele, William; Lorin, Thomas; Gwoziecki, Romain; Baines, Yannick; Biscarrat, Jérome; Jaud, Marie-Anne; Gillot, Charlotte; Charles, Matthew; Plissonnier, Marc; Reimbold, Gilles (2017)

32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit. - Thomas, Olivier; Noel, Jean-Philippe; Fenouillet-Béranger, Claire; Jaud, Marie-Anne; Dura, J.; Perreau, P.; Boeuf, Frédéric; Andrieu, François; Delprat, D.; Boedt, F.; Bourdelle, Konstantin; Nguyen, Bich-Yen; et al. (2010)