Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited) - William Vandendaele; Camille Leurquin; R. Lavieville; Marie-Anne Jaud; Abygaël Viey; Romain Gwoziecki; B. Mohamad; Etienne Nowak; Aurore Constant; Ferdinando Iucolano (IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023, 2023)

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface - B. Rrustemi; Aby-Gaël Viey; Marie-Anne Jaud; François Triozon; William Vandendaele; Charles Leroux; Jacques Cluzel; S. Martin; Cyrille Le Royer; Romain Gwoziecki; Roberto Modica; Ferdinando Iucolano; et al. (51st IEEE European Solid-State Device Research Conference, ESSDERC 2021, Grenoble, France, September 13-22, 2021, 2021)

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Jean Coignus; Jacques Cluzel; Alexis Krakovinsky; Simon Martin; Jérome Biscarrat; Romain Gwoziecki; Veronique Sousa; Fred Gaillard; Roberto Modica; et al. (IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021, 2021)

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Romain Gwoziecki; A. Torres; Marc Plissonnier; Fred Gaillard; Gérard Ghibaudo; Roberto Modica; Ferdinando Iucolano; Matteo Meneghini; Gaudenzio Meneghesso (IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019, 2019)

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT - William Vandendaele; Xavier Garros; Thomas Lorin; Erwan Morvan; A. Torres; René Escoffier; Marie-Anne Jaud; Marc Plissonnier; Fred Gaillard (IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018, 2018)

On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes - William Vandendaele; Thomas Lorin; Romain Gwoziecki; Yannick Baines; Jérome Biscarrat; Marie-Anne Jaud; Charlotte Gillot; Matthew Charles; Marc Plissonnier; Gilles Reimbold (47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017, 2017)

32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit - Olivier Thomas; Jean-Philippe Noel; Claire Fenouillet-Béranger; Marie-Anne Jaud; J. Dura; P. Perreau; Frédéric Boeuf; François Andrieu; D. Delprat; F. Boedt; Konstantin Bourdelle; Bich-Yen Nguyen; et al. (International Symposium on Circuits and Systems (ISCAS 2010), May 30 - June 2, 2010, Paris, France, 2010)