A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking. - Kim, Jung-Sik; Oh, Chi Sung; Lee, Hocheol; Lee, Donghyuk; Hwang, Hyong-Ryol; Hwang, Sooman; Na, Byongwook; Moon, Joungwook; Kim, Jin-Guk; Park, Hanna; Ryu, Jang-Woo; Park, Kiwon; et al. (IEEE J. Solid State Circuits, 2012)

A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking. - Kim, Jung-Sik; Oh, Chi Sung; Lee, Hocheol; Lee, Donghyuk; Hwang, Hyong-Ryol; Hwang, Sooman; Na, Byongwook; Moon, Joungwook; Kim, Jin-Guk; Park, Hanna; Ryu, Jang-Woo; Park, Kiwon; et al. (2011)