Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides - John S. Suehle; Baozhong Zhu; Yuan Chen; Joseph B. Bernstein (Microelectron. Reliab., 2005)

Reverse short channel effects in high-k gated nMOSFETs - Jin-Ping Han; Sang-Mo Koo; Eric M. Vogel; Evgeni P. Gusev; C. D'Emic; Curt A. Richter; John S. Suehle (Microelectron. Reliab., 2005)

Ultra-thin Gate Oxide Reliability and Implications for Design (Tutorial Abstract) - John S. Suehle (3rd International Symposium on Quality of Electronic Design, ISQED 2002, San Jose, CA, USA, March 18-21, 2002, 2002)